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Effect of Zn(O,S) buffer layer thickness on charge carrier relaxation dynamics of CuInSe2 solar cell

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Effect of Zn(O,S) buffer layer thickness on charge carrier relaxation dynamics of CuInSe2 solar cell
นักวิจัย : Sun, Juan , Nalla, Venkatram , Nguyen, Mai , Ren, Yi , Chiam, Sing Yang , Wang, Yue , Tai, Kong Fai , Sun, Handong , Zheludev, Nikolay , Batabyal, Sudip K. , Wong, Lydia H.
คำค้น : DRNTU::Engineering::Materials::Energy materials
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2558
อ้างอิง : Sun, J., Nalla, V., Nguyen, M., Ren, Y., Chiam, S. Y., Wang, Y., et al. (2015). Effect of Zn(O,S) buffer layer thickness on charge carrier relaxation dynamics of CuInSe2 solar cell. Solar energy, 115, 396-404. , 0038-092X , http://hdl.handle.net/10220/25312 , http://dx.doi.org/10.1016/j.solener.2015.03.008
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Solar energy
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

A pinhole free Zn(O,S) buffer layer was deposited on CuInSe2 (CIS) absorber by chemical bath deposition (CBD) method. Thin Zn(O,S) exhibits better power conversion efficiency (PCE) at lower thickness. Enhancement of PCE from 1.5% to 3.9% was observed for electrodeposited CIS photovoltaic device when the buffer layer thickness reduces from 50 nm to 20 nm. Although the conduction band offset (CBO) at Zn(O,S)/CIS interface are almost identical for both the 20 nm and 50 nm thick buffer layers, investigation on charge carrier dynamics reveals that the carrier lifetime for the 20 nm buffer is much longer than the 50 nm buffer. This offers a plausible explanation for the higher Jsc of the device with 20 nm buffer layer compared to the device with 50 nm buffer layer.

ASTAR (Agency for Sci., Tech. and Research, S’pore)

MOE (Min. of Education, S’pore)

EDB (Economic Devt. Board, S’pore)

บรรณานุกรม :
Sun, Juan , Nalla, Venkatram , Nguyen, Mai , Ren, Yi , Chiam, Sing Yang , Wang, Yue , Tai, Kong Fai , Sun, Handong , Zheludev, Nikolay , Batabyal, Sudip K. , Wong, Lydia H. . (2558). Effect of Zn(O,S) buffer layer thickness on charge carrier relaxation dynamics of CuInSe2 solar cell.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Sun, Juan , Nalla, Venkatram , Nguyen, Mai , Ren, Yi , Chiam, Sing Yang , Wang, Yue , Tai, Kong Fai , Sun, Handong , Zheludev, Nikolay , Batabyal, Sudip K. , Wong, Lydia H. . 2558. "Effect of Zn(O,S) buffer layer thickness on charge carrier relaxation dynamics of CuInSe2 solar cell".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Sun, Juan , Nalla, Venkatram , Nguyen, Mai , Ren, Yi , Chiam, Sing Yang , Wang, Yue , Tai, Kong Fai , Sun, Handong , Zheludev, Nikolay , Batabyal, Sudip K. , Wong, Lydia H. . "Effect of Zn(O,S) buffer layer thickness on charge carrier relaxation dynamics of CuInSe2 solar cell."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2558. Print.
Sun, Juan , Nalla, Venkatram , Nguyen, Mai , Ren, Yi , Chiam, Sing Yang , Wang, Yue , Tai, Kong Fai , Sun, Handong , Zheludev, Nikolay , Batabyal, Sudip K. , Wong, Lydia H. . Effect of Zn(O,S) buffer layer thickness on charge carrier relaxation dynamics of CuInSe2 solar cell. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2558.