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Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO2 grown by atomic layer deposition

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO2 grown by atomic layer deposition
นักวิจัย : Ye, Gang , Wang, Hong , Ng, Serene Lay Geok , Ji, Rong , Arulkumaran, Subramaniam , Ng, Geok Ing , Li, Yang , Liu, Zhi Hong , Ang, Kian Siong
คำค้น : DRNTU::Science::Physics::Atomic physics
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2558
อ้างอิง : Ye, G., Wang, H., Ng, S. L. G., Ji, R., Arulkumaran, S., Ng, G. I., et al. (2015). Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO2 grown by atomic layer deposition. Applied physics letters, 106(9), 091603-. , http://hdl.handle.net/10220/25321 , http://dx.doi.org/10.1063/1.4914351
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Applied physics letters
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

The effect of post-deposition annealing on chemical bonding states at interface between Al0.5Ga0.5N and ZrO2 grown by atomic layer deposition (ALD) is studied by angle-resolved x-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. It has been found that both of Al-O/Al 2p and Ga-O/Ga 3d area ratio decrease at annealing temperatures lower than 500 °C, which could be attributed to “clean up” effect of ALD-ZrO2 on AlGaN. Compared to Ga spectra, a much larger decrease in Al-O/Al 2p ratio at a smaller take-off angle θ is observed, which indicates higher effectiveness of the passivation of Al-O bond than Ga-O bond through “clean up” effect near the interface. However, degradation of ZrO2/AlGaN interface quality due to re-oxidation at higher annealing temperature (>500 °C) is also found. The XPS spectra clearly reveal that Al atoms at ZrO2/AlGaN interface are easier to get oxidized as compared with Ga atoms.

บรรณานุกรม :
Ye, Gang , Wang, Hong , Ng, Serene Lay Geok , Ji, Rong , Arulkumaran, Subramaniam , Ng, Geok Ing , Li, Yang , Liu, Zhi Hong , Ang, Kian Siong . (2558). Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO2 grown by atomic layer deposition.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Ye, Gang , Wang, Hong , Ng, Serene Lay Geok , Ji, Rong , Arulkumaran, Subramaniam , Ng, Geok Ing , Li, Yang , Liu, Zhi Hong , Ang, Kian Siong . 2558. "Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO2 grown by atomic layer deposition".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Ye, Gang , Wang, Hong , Ng, Serene Lay Geok , Ji, Rong , Arulkumaran, Subramaniam , Ng, Geok Ing , Li, Yang , Liu, Zhi Hong , Ang, Kian Siong . "Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO2 grown by atomic layer deposition."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2558. Print.
Ye, Gang , Wang, Hong , Ng, Serene Lay Geok , Ji, Rong , Arulkumaran, Subramaniam , Ng, Geok Ing , Li, Yang , Liu, Zhi Hong , Ang, Kian Siong . Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO2 grown by atomic layer deposition. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2558.