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3D simulation-based research on the effect of interconnect structures on circuit reliability

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : 3D simulation-based research on the effect of interconnect structures on circuit reliability
นักวิจัย : He, Feifei , Tan, Cher Ming
คำค้น : DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2555
อ้างอิง : He, F., & Tan, C. M. (2012). 3D simulation-based research on the effect of interconnect structures on circuit reliability. World journal of modelling and simulation, 8(4), 271-284. , 1746-7233 , http://hdl.handle.net/10220/25292 , http://www.worldacademicunion.com/journal/1746-7233WJMS/wjmsvol08no04paper03.pdf
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : World journal of modelling and simulation
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

Electromigration (EM) of the interconnects is a key factor in determining the reliability of an integrated circuit, especially for the present-day IC with shrinking interconnect dimension. The simulation of the EM reliability of the interconnects is usually performed using the line-via structure at the EM test temperature (e.g. 300 oC).However, such simulation using the line-via structure may not give the same void nucleation location as in the real circuit structure, especially at the circuit operation temperature (e.g. 90C). This change in failure site can cause mis-interpretation of the EM weak spot location when the line-via structure is used for data extrapolation in predicting the EM reliability of the entire circuit. This drives the need for the reliability simulation using a complete 3D circuit model. In this paper, we build several 3D models of a simple circuit with different interconnect structures and examine the effect of the layout structural changes, such as the via and contact positions and their numbers, the inter-transistor distance, the metal structure and layer number, on the circuit EM reliability. 3D circuit model. In this paper, we build several 3D models of a simple circuit with different interconnect structures and examine the effect of the layout structural changes, such as the via and contact positions and their numbers, the inter-transistor distance, the metal structure and layer number, on the circuit EM reliability. A 585.40% improvement in the EM lifetime can be obtained by using Metal 1 as the output line instead of the metal/via stacks, while a 136.97% reduction in the EM lifetime is observed when the number of contacts of the transistor reduces from 6 to 3.The simulation results are consistent with the experimental results in the literature and thus validate the capability of performing the EM lifetime comparison of different interconnect structures using the 3D circuit model.

บรรณานุกรม :
He, Feifei , Tan, Cher Ming . (2555). 3D simulation-based research on the effect of interconnect structures on circuit reliability.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
He, Feifei , Tan, Cher Ming . 2555. "3D simulation-based research on the effect of interconnect structures on circuit reliability".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
He, Feifei , Tan, Cher Ming . "3D simulation-based research on the effect of interconnect structures on circuit reliability."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2555. Print.
He, Feifei , Tan, Cher Ming . 3D simulation-based research on the effect of interconnect structures on circuit reliability. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2555.