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Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)
นักวิจัย : Anand, M. J. , Ng, G. I. , Arulkumaran, S. , Manoj Kumar, C. M. , Ranjan, K. , Vicknesh, S. , Foo, S. C. , Syamal, B. , Zhou, X.
คำค้น : DRNTU::Engineering::Electrical and electronic engineering::Electronic systems
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2558
อ้างอิง : Anand, M. J., Ng, G. I., Arulkumaran, S., Manoj Kumar, C. M., Ranjan, K., Vicknesh, S., et al. (2015). Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111). Applied physics letters, 106(8), 083508-. , 0003-6951 , http://hdl.handle.net/10220/25288 , http://dx.doi.org/10.1063/1.4913841
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Applied physics letters
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

The influence of electric field (EF) on the dynamic ON-resistance (dyn-R DS[ON]) and threshold-voltage shift (ΔVth) of AlGaN/GaN high electron mobility transistors on Si has been investigated using pulsed current-voltage (IDS-VDS) and drain current (ID) transients. Different EF was realized with devices of different gate-drain spacing (Lgd) under the same OFF-state stress. Under high-EF (Lgd = 2 μm), the devices exhibited higher dyn-R DS[ON] degradation but a small ΔVth (∼120 mV). However, at low-EF (Lgd = 5 μm), smaller dyn-R DS[ON] degradation but a larger ΔVth (∼380 mV) was observed. Our analysis shows that under OFF-state stress, the gate electrons are injected and trapped in the AlGaN barrier by tunnelling-assisted Poole-Frenkel conduction mechanism. Under high-EF, trapping spreads towards the gate-drain access region of the AlGaN barrier causing dyn-R DS[ON] degradation, whereas under low-EF, trapping is mostly confined under the gate causing ΔVth. A trap with activation energy 0.33 eV was identified in the AlGaN barrier by ID-transient measurements. The influence of EF on trapping was also verified by Silvaco TCAD simulations.

บรรณานุกรม :
Anand, M. J. , Ng, G. I. , Arulkumaran, S. , Manoj Kumar, C. M. , Ranjan, K. , Vicknesh, S. , Foo, S. C. , Syamal, B. , Zhou, X. . (2558). Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111).
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Anand, M. J. , Ng, G. I. , Arulkumaran, S. , Manoj Kumar, C. M. , Ranjan, K. , Vicknesh, S. , Foo, S. C. , Syamal, B. , Zhou, X. . 2558. "Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Anand, M. J. , Ng, G. I. , Arulkumaran, S. , Manoj Kumar, C. M. , Ranjan, K. , Vicknesh, S. , Foo, S. C. , Syamal, B. , Zhou, X. . "Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2558. Print.
Anand, M. J. , Ng, G. I. , Arulkumaran, S. , Manoj Kumar, C. M. , Ranjan, K. , Vicknesh, S. , Foo, S. C. , Syamal, B. , Zhou, X. . Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111). กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2558.