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Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient
นักวิจัย : Lee, Kwang Hong , Bao, Shuyu , Chong, Gang Yih , Tan, Yew Heng , Fitzgerald, Eugene A. , Tan, Chuan Seng
คำค้น : DRNTU::Engineering::Electrical and electronic engineering
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2558
อ้างอิง : Lee, K. H., Bao, S., Chong, G. Y., Tan, Y. H., Fitzgerald, E. A., & Tan, C. S. (2015). Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient. APL materials, 3(1), 016102-. , 2166-532X , http://hdl.handle.net/10220/25276 , http://dx.doi.org/10.1063/1.4905487
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : APL Materials
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

A method to remove the misfit dislocations and reduce the threading dislocations density (TDD) in the germanium (Ge) epilayer growth on a silicon (Si) substrate is presented. The Ge epitaxial film is grown directly on the Si (001) donor wafer using a “three-step growth” approach in a reduced pressure chemical vapour deposition. The Ge epilayer is then bonded and transferred to another Si (001) handle wafer to form a germanium-on-insulator (GOI) substrate. The misfit dislocations, which are initially hidden along the Ge/Si interface, are now accessible from the top surface. These misfit dislocations are then removed by annealing the GOI substrate. After the annealing, the TDD of the Ge epilayer can be reduced by at least two orders of magnitude to <5 × 106 cm−2.

บรรณานุกรม :
Lee, Kwang Hong , Bao, Shuyu , Chong, Gang Yih , Tan, Yew Heng , Fitzgerald, Eugene A. , Tan, Chuan Seng . (2558). Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Lee, Kwang Hong , Bao, Shuyu , Chong, Gang Yih , Tan, Yew Heng , Fitzgerald, Eugene A. , Tan, Chuan Seng . 2558. "Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Lee, Kwang Hong , Bao, Shuyu , Chong, Gang Yih , Tan, Yew Heng , Fitzgerald, Eugene A. , Tan, Chuan Seng . "Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2558. Print.
Lee, Kwang Hong , Bao, Shuyu , Chong, Gang Yih , Tan, Yew Heng , Fitzgerald, Eugene A. , Tan, Chuan Seng . Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2558.