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Thickness dependence of optical properties of amorphous indium gallium zinc oxide thin films : effects of free-electrons and quantum confinement

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Thickness dependence of optical properties of amorphous indium gallium zinc oxide thin films : effects of free-electrons and quantum confinement
นักวิจัย : Li, X. D. , Chen, Siyuan , Chen, T. P. , Liu, Y.
คำค้น : DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2558
อ้างอิง : Li, X. D., Chen, S., Chen, T. P., & Liu, Y. (2015). Thickness dependence of optical properties of amorphous indium gallium zinc oxide thin films : effects of free-electrons and quantum confinement. ECS solid state letters, 4(3), Pg 29-32. , 2162-8742 , http://hdl.handle.net/10220/25241 , http://dx.doi.org/10.1149/2.0031504ssl
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : ECS solid state letters
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

Dielectric function of amorphous indium gallium zinc oxide (a-IGZO) thin films is found to shift significantly with the film thickness, which is attributed to the changes in both the bandgap and electron concentration of the IGZO thin films with the film thickness. The ultrathin films (film thickness < ∼20 nm) exhibit a bandgap expansion with reducing film thickness due to the quantum confinement effect; while the thicker films (thickness > ∼35 nm) demonstrate the free-electron effect, i.e. the Burstein-Moss shift and increase of free-electrons absorption with increasing electron concentration.

บรรณานุกรม :
Li, X. D. , Chen, Siyuan , Chen, T. P. , Liu, Y. . (2558). Thickness dependence of optical properties of amorphous indium gallium zinc oxide thin films : effects of free-electrons and quantum confinement.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Li, X. D. , Chen, Siyuan , Chen, T. P. , Liu, Y. . 2558. "Thickness dependence of optical properties of amorphous indium gallium zinc oxide thin films : effects of free-electrons and quantum confinement".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Li, X. D. , Chen, Siyuan , Chen, T. P. , Liu, Y. . "Thickness dependence of optical properties of amorphous indium gallium zinc oxide thin films : effects of free-electrons and quantum confinement."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2558. Print.
Li, X. D. , Chen, Siyuan , Chen, T. P. , Liu, Y. . Thickness dependence of optical properties of amorphous indium gallium zinc oxide thin films : effects of free-electrons and quantum confinement. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2558.