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Study of single crystal diamond schottky barrier diodes for power electronics applications

หน่วยงาน Nanyang Technological University, Singapore

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ชื่อเรื่อง : Study of single crystal diamond schottky barrier diodes for power electronics applications
นักวิจัย : Arie Nawawi
คำค้น : DRNTU::Engineering::Electrical and electronic engineering::Semiconductors , DRNTU::Engineering::Electrical and electronic engineering::Power electronics , DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2557
อ้างอิง : Arie Nawawi. (2014). Study of single crystal diamond schottky barrier diodes for power electronics applications. Doctoral thesis, Nanyang Technological University, Singapore. , http://hdl.handle.net/10356/61611
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : -
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

Diamond as wide band-gap material is promising for high-voltage, high-power, high-frequency, and high-temperature devices due to its superior properties: high maximum electric-field (10-20 MV/cm), electron-mobility (4500 cm2.V-1.s-1) and hole-mobility (3800 cm2.V-1.s-1), saturation velocity (2.7x107 cm/s), and thermal conductivity (22-24 W/cm.K). This thesis focuses on the development, characterizations, analysis, modeling and simulations, and design optimizations of diamond Schottky barrier diode (SBD) for power electronics applications. Throughout the study, several p-type vertical diamond SBDs with Molybdenum Schottky contacts and different specifications have been fabricated and measured. Static and transient characteristics of the diamond SBDs at different temperatures were investigated based on the experimental results, theoretical considerations, and numerical simulations using finite-element physics-based Technology-Computer-Aided-Design (TCAD) Sentaurus software. The non-ideal behaviours of the experimental SBDs were analyzed and simulated based on the metal-interfacial layer-semiconductor model. Furthermore, investigations and design optimizations of the edge termination structures for diamond power SBD utilizing high-k oxide were presented.

บรรณานุกรม :
Arie Nawawi . (2557). Study of single crystal diamond schottky barrier diodes for power electronics applications.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Arie Nawawi . 2557. "Study of single crystal diamond schottky barrier diodes for power electronics applications".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Arie Nawawi . "Study of single crystal diamond schottky barrier diodes for power electronics applications."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2557. Print.
Arie Nawawi . Study of single crystal diamond schottky barrier diodes for power electronics applications. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2557.