ridm@nrct.go.th   ระบบคลังข้อมูลงานวิจัยไทย   รายการโปรดที่คุณเลือกไว้

An experimental study of lateral charge transfer in silicon nanocrystal layer embedded in SiO2 thin film

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : An experimental study of lateral charge transfer in silicon nanocrystal layer embedded in SiO2 thin film
นักวิจัย : Wong, J. I. , Chen, T. P. , Tay, Y. Y. , Liu, P. , Yang, M. , Liu, Z. , Yang, H. Y.
คำค้น : DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2557
อ้างอิง : Wong, J. I., Chen, T. P., Tay, Y. Y., Liu, P., Yang, M., Liu, Z., et al. (2014). An experimental study of lateral charge transfer in silicon nanocrystal layer embedded in SiO2 thin film. Nanoscience and nanotechnology letters, 6(9), 798-804. , http://hdl.handle.net/10220/24654 , http://dx.doi.org/10.1166/nnl.2014.1861
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Nanoscience and nanotechnology letters
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

Lateral charge transfer in a Si nanocrystal (nc-Si) layer embedded in a SiO2 thin film synthesized by Si ion implantation is investigated. When the nc-Si in one metal-oxide-semiconductor device is charged, the charging effect on both the charged device itself and the neighboring devices is monitored. With the existence of a continuous nc-Si layer in the spacing regions between the charged device and the neighboring devices, the charging operation induces a large flat-band voltage shift in the neighboring devices, and at the same time the charged device itself is also strongly affected in return. The phenomenon depends on both the nc-Si separation and the device spacing. It is attributed to the lateral charge transfer in the nc-Si layer. The result has an important indication for non-volatile memory applications of the nc-Si synthesized by the ion implantation technique.

บรรณานุกรม :
Wong, J. I. , Chen, T. P. , Tay, Y. Y. , Liu, P. , Yang, M. , Liu, Z. , Yang, H. Y. . (2557). An experimental study of lateral charge transfer in silicon nanocrystal layer embedded in SiO2 thin film.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Wong, J. I. , Chen, T. P. , Tay, Y. Y. , Liu, P. , Yang, M. , Liu, Z. , Yang, H. Y. . 2557. "An experimental study of lateral charge transfer in silicon nanocrystal layer embedded in SiO2 thin film".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Wong, J. I. , Chen, T. P. , Tay, Y. Y. , Liu, P. , Yang, M. , Liu, Z. , Yang, H. Y. . "An experimental study of lateral charge transfer in silicon nanocrystal layer embedded in SiO2 thin film."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2557. Print.
Wong, J. I. , Chen, T. P. , Tay, Y. Y. , Liu, P. , Yang, M. , Liu, Z. , Yang, H. Y. . An experimental study of lateral charge transfer in silicon nanocrystal layer embedded in SiO2 thin film. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2557.