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Influence of post-deposition annealing on interfacial properties between GaN and ZrO2 grown by atomic layer deposition

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Influence of post-deposition annealing on interfacial properties between GaN and ZrO2 grown by atomic layer deposition
นักวิจัย : Ye, Gang , Wang, Hong , Ng, Serene Lay Geok , Ji, Rong , Arulkumaran, Subramaniam , Ng, Geok Ing , Li, Yang , Liu, Zhi Hong , Ang, Kian Siong
คำค้น : DRNTU::Science::Physics::Atomic physics
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2557
อ้างอิง : Ye, G., Wang, H., Ng, S. L. G., Ji, R., Arulkumaran, S., Ng, G. I., et al. (2014). Influence of post-deposition annealing on interfacial properties between GaN and ZrO2 grown by atomic layer deposition. Applied physics letters, 105(15). , http://hdl.handle.net/10220/24216 , http://dx.doi.org/10.1063/1.4898577
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Applied physics letters
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

Influence of post-deposition annealing on interfacial properties related to the formation/annihilation of interfacial GaOx layer of ZrO2 grown by atomic layer deposition (ALD) on GaN is studied. ZrO2 films were annealed in N2 atmospheres in temperature range of 300 °C to 700 °C and analyzed by X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. It has been found that Ga-O bond to Ga-N bond area ratio decreases in the samples annealed at temperatures lower than 500 °C, which could be attributed to the thinning of GaOx layer associated with low surface defect states due to “clean up” effect of ALD-ZrO2 on GaN. However, further increase in annealing temperature results in deterioration of interface quality, which is evidenced by increase in Ga-O bond to Ga-N bond area ratio and the reduction of Ga-N binding energy.

บรรณานุกรม :
Ye, Gang , Wang, Hong , Ng, Serene Lay Geok , Ji, Rong , Arulkumaran, Subramaniam , Ng, Geok Ing , Li, Yang , Liu, Zhi Hong , Ang, Kian Siong . (2557). Influence of post-deposition annealing on interfacial properties between GaN and ZrO2 grown by atomic layer deposition.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Ye, Gang , Wang, Hong , Ng, Serene Lay Geok , Ji, Rong , Arulkumaran, Subramaniam , Ng, Geok Ing , Li, Yang , Liu, Zhi Hong , Ang, Kian Siong . 2557. "Influence of post-deposition annealing on interfacial properties between GaN and ZrO2 grown by atomic layer deposition".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Ye, Gang , Wang, Hong , Ng, Serene Lay Geok , Ji, Rong , Arulkumaran, Subramaniam , Ng, Geok Ing , Li, Yang , Liu, Zhi Hong , Ang, Kian Siong . "Influence of post-deposition annealing on interfacial properties between GaN and ZrO2 grown by atomic layer deposition."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2557. Print.
Ye, Gang , Wang, Hong , Ng, Serene Lay Geok , Ji, Rong , Arulkumaran, Subramaniam , Ng, Geok Ing , Li, Yang , Liu, Zhi Hong , Ang, Kian Siong . Influence of post-deposition annealing on interfacial properties between GaN and ZrO2 grown by atomic layer deposition. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2557.