ridm@nrct.go.th   ระบบคลังข้อมูลงานวิจัยไทย   รายการโปรดที่คุณเลือกไว้

Electrical field dependent mobility analysis of ultralong individual single walled carbon nanotube field-effect transistor

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Electrical field dependent mobility analysis of ultralong individual single walled carbon nanotube field-effect transistor
นักวิจัย : Krishna, S. V. Hari , An, Jianing , Zheng, Lianxi
คำค้น : DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2556
อ้างอิง : Krishna, S. V. H., An, J., & Zheng, L. (2013). Electrical field dependent mobility analysis of ultralong individual single walled carbon nanotube field-effect transistor. Journal of nanoelectronics and optoelectronics, 8(2), 202-207. , http://hdl.handle.net/10220/24047 , http://dx.doi.org/10.1166/jno.2013.1455
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Journal of nanoelectronics and optoelectronics
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

Ethanol based chemical vapour deposition (CVD) was used to grow clean individual ultralong single walled carbon nanotubes (SWCNTs) and fabricated as carbon nanotube field-effect transistors (CNTFETs). Here, the two kinds of mobility-effective physical mobility and conventional field-effect mobility were investigated using classical diffusive metal-oxide-semiconductor field-effect transistor (MOSFET) model and their ratios were analysed in the strong inversion region and the near-threshold region as a function of the vertical gate bias and horizontal drain bias. The fabricated CNTFETs showed intrinsic mobilities as high as 105 cm2 V–1 s–1 and device mobility greater than 104 cm2 V–1 s–1 consistently at room temperature 300 K. In the linear regime, the ratio of both the above mobilities obtained for a number of devices in the strong inversion and near–threshold region were around to have mean values of 2.34 and 10.18 respectively. The transport is diffusive and scattering dominated, which could pave way for mobility based nanosensing for future applications.

บรรณานุกรม :
Krishna, S. V. Hari , An, Jianing , Zheng, Lianxi . (2556). Electrical field dependent mobility analysis of ultralong individual single walled carbon nanotube field-effect transistor.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Krishna, S. V. Hari , An, Jianing , Zheng, Lianxi . 2556. "Electrical field dependent mobility analysis of ultralong individual single walled carbon nanotube field-effect transistor".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Krishna, S. V. Hari , An, Jianing , Zheng, Lianxi . "Electrical field dependent mobility analysis of ultralong individual single walled carbon nanotube field-effect transistor."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2556. Print.
Krishna, S. V. Hari , An, Jianing , Zheng, Lianxi . Electrical field dependent mobility analysis of ultralong individual single walled carbon nanotube field-effect transistor. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2556.