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High vertical breakdown strength in with low specific on-resistance AlGaN/AlN/GaN HEMTs on silicon

หน่วยงาน Nanyang Technological University, Singapore

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ชื่อเรื่อง : High vertical breakdown strength in with low specific on-resistance AlGaN/AlN/GaN HEMTs on silicon
นักวิจัย : Arulkumaran, Subramaniam , Vicknesh, S. , Ng, G. I. , Liu, Z. H. , Selvaraj, S. L. , Egawa, T.
คำค้น : DRNTU::Engineering::Electrical and electronic engineering::Applications of electronics
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2554
อ้างอิง : Arulkumaran, S., Vicknesh, S., Ng, G. I., Liu, Z. H., Selvaraj, S. L.,& Egawa, T. (2011). High vertical breakdown strength in with low specific on-resistance AlGaN/AlN/GaN HEMTs on silicon. Physica status solidi (RRL) - Rapid research letters, 5(1), 37-39. , 1862-6254 , http://hdl.handle.net/10220/23915 , http://dx.doi.org/10.1002/pssr.201004465 , 159185
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Physica status solidi (RRL) - Rapid research letters
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

Off-state and vertical breakdown characteristics of AlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) on high-resistivity (HR)-Si substrate were investigated and analysed. Three-terminal off-state breakdown (BVgd) was measured as a function of gate–drain spacing (Lgd). The saturation of BVgd with Lgd is because of increased gate leakage current. HEMTs with Lgd = 6 µm exhibited a specific on-resistance RDS[ON] of 0.45 mΩ cm2. The figure of merit (FOM = BVgd2/RDS[ON]) is as high as 2.0 × 108 V2 Ω–1 cm–2, the highest among the reported values for GaN HEMTs on Si substrate. A vertical breakdown of ∼1000 V was observed on 1.2 µm thick buffer GaN/AlN grown on Si substrate. The occurrence of high breakdown voltage is due to the high quality of GaN/AlN buffer layers on Si substrate with reduced threading dislocations which has been confirmed by transmission electron microscopy (TEM). This indicates that the AlGaN/AlN/GaN HEMT with 1.2 µm thick GaN/AlN buffer on Si substrate is promising candidate for high-power and high-speed switching device applications.

บรรณานุกรม :
Arulkumaran, Subramaniam , Vicknesh, S. , Ng, G. I. , Liu, Z. H. , Selvaraj, S. L. , Egawa, T. . (2554). High vertical breakdown strength in with low specific on-resistance AlGaN/AlN/GaN HEMTs on silicon.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Arulkumaran, Subramaniam , Vicknesh, S. , Ng, G. I. , Liu, Z. H. , Selvaraj, S. L. , Egawa, T. . 2554. "High vertical breakdown strength in with low specific on-resistance AlGaN/AlN/GaN HEMTs on silicon".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Arulkumaran, Subramaniam , Vicknesh, S. , Ng, G. I. , Liu, Z. H. , Selvaraj, S. L. , Egawa, T. . "High vertical breakdown strength in with low specific on-resistance AlGaN/AlN/GaN HEMTs on silicon."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2554. Print.
Arulkumaran, Subramaniam , Vicknesh, S. , Ng, G. I. , Liu, Z. H. , Selvaraj, S. L. , Egawa, T. . High vertical breakdown strength in with low specific on-resistance AlGaN/AlN/GaN HEMTs on silicon. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2554.