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Reduction of Cu-rich interfacial layer and improvement of bulk CuO property through two-step sputtering for p-CuO/n-Si heterojunction solar cell

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Reduction of Cu-rich interfacial layer and improvement of bulk CuO property through two-step sputtering for p-CuO/n-Si heterojunction solar cell
นักวิจัย : Masudy-Panah, Saeid , Dalapati, Goutam Kumar , Radhakrishnan, K. , Kumar, Avishek , Tan, Hui Ru
คำค้น : DRNTU::Science::Physics::Electricity and magnetism
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2557
อ้างอิง : Masudy-Panah, S., Dalapati, G. K., Radhakrishnan, K., Kumar, A., & Tan, H. R. (2014). Reduction of Cu-rich interfacial layer and improvement of bulk CuO property through two-step sputtering for p-CuO/n-Si heterojunction solar cell. Journal of applied physics, 116(7), 074501-. , http://hdl.handle.net/10220/20677 , http://dx.doi.org/10.1063/1.4893321
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Journal of applied physics
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

Copper-rich interfacial-layer (Cu-rich IL) is formed during sputter deposition of cupric oxide (CuO) layer on silicon (Si). It has significant impact on the performance of p-CuO/n-Si heterojunction solar cells. In this report, CuO films deposited on Si at different RF-power levels using single and two-step RF-sputtering techniques and p-CuO/n-Si heterojunction solar cells have been investigated. Systematic characterization using XPS, AFM, XRD, Raman, and HR-TEM reveal that two-step RF-sputtering technique offers better crystal quality CuO film with thinner Cu-rich IL layer. Photovoltaic (PV) properties with an open-circuit voltage (Voc ) of 421 mV, short circuit current (Jsc ) of 4.5 mA/cm2, and a photocurrent of 8.3 mA/cm2 have been achieved for the cells prepared using two-step sputtering method, which are significantly higher than that for the solar cells fabricated using a single-step sputtering. The PV properties were further improved by depositing CuO films at higher working pressure with nitrogen doping. The efficiency of the best device achieved is approximately 1.21%, which is the highest value reported for p-CuO/n-Si heterojunction based solar cells.

บรรณานุกรม :
Masudy-Panah, Saeid , Dalapati, Goutam Kumar , Radhakrishnan, K. , Kumar, Avishek , Tan, Hui Ru . (2557). Reduction of Cu-rich interfacial layer and improvement of bulk CuO property through two-step sputtering for p-CuO/n-Si heterojunction solar cell.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Masudy-Panah, Saeid , Dalapati, Goutam Kumar , Radhakrishnan, K. , Kumar, Avishek , Tan, Hui Ru . 2557. "Reduction of Cu-rich interfacial layer and improvement of bulk CuO property through two-step sputtering for p-CuO/n-Si heterojunction solar cell".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Masudy-Panah, Saeid , Dalapati, Goutam Kumar , Radhakrishnan, K. , Kumar, Avishek , Tan, Hui Ru . "Reduction of Cu-rich interfacial layer and improvement of bulk CuO property through two-step sputtering for p-CuO/n-Si heterojunction solar cell."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2557. Print.
Masudy-Panah, Saeid , Dalapati, Goutam Kumar , Radhakrishnan, K. , Kumar, Avishek , Tan, Hui Ru . Reduction of Cu-rich interfacial layer and improvement of bulk CuO property through two-step sputtering for p-CuO/n-Si heterojunction solar cell. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2557.