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Magnetism induced by excess electrons trapped at diamagnetic edge-quantum well in multi-layer graphene

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Magnetism induced by excess electrons trapped at diamagnetic edge-quantum well in multi-layer graphene
นักวิจัย : Zhang, Xi , Wang, Chao , Diao, Dongfeng , Sun, Chang Q.
คำค้น : DRNTU::Engineering::Electrical and electronic engineering
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2557
อ้างอิง : Zhang, X., Wang, C., Sun, C. Q., & Diao, D. (2014). Magnetism induced by excess electrons trapped at diamagnetic edge-quantum well in multi-layer graphene. Applied Physics Letters, 105(4), 042402-. , 0003-6951 , http://hdl.handle.net/10220/20367 , http://dx.doi.org/10.1063/1.4891558
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Applied physics letters
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

In this paper, we clarified a robust mechanism of magnetism generated by excess electrons captured by edge-quantum well of diamagnetic armchair edges. Consistency between density functional theory calculations and electron cyclotron resonance experiments verified that: (1) Multi-layer armchair nanoribbons are stable with proper amounts of excess electrons which can provide net spin; (2) Since under-coordination induces lattice relaxation and potential well modulation, electrons tend to be trapped at edges; and (3) Neither large amount of excess electrons nor positive charges can induce magnetism. This work shed light on the development of graphene devices in its magnetic applications.

บรรณานุกรม :
Zhang, Xi , Wang, Chao , Diao, Dongfeng , Sun, Chang Q. . (2557). Magnetism induced by excess electrons trapped at diamagnetic edge-quantum well in multi-layer graphene.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Zhang, Xi , Wang, Chao , Diao, Dongfeng , Sun, Chang Q. . 2557. "Magnetism induced by excess electrons trapped at diamagnetic edge-quantum well in multi-layer graphene".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Zhang, Xi , Wang, Chao , Diao, Dongfeng , Sun, Chang Q. . "Magnetism induced by excess electrons trapped at diamagnetic edge-quantum well in multi-layer graphene."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2557. Print.
Zhang, Xi , Wang, Chao , Diao, Dongfeng , Sun, Chang Q. . Magnetism induced by excess electrons trapped at diamagnetic edge-quantum well in multi-layer graphene. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2557.