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Germanium p-i-n avalanche photodetector fabricated by point defect healing process

หน่วยงาน Nanyang Technological University, Singapore

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ชื่อเรื่อง : Germanium p-i-n avalanche photodetector fabricated by point defect healing process
นักวิจัย : Shim, Jae Woo , Kang, Dong-Ho , Yoo, Gwangwe , Hong, Seong-Taek , Jung, Woo-Shik , Kuh, Bong Jin , Lee, Beomsuk , Shin, Dongjae , Ha, Kyoungho , Kim, Gwang Sik , Yu, Hyun-Yong , Baek, Jung Woo , Park, Jin-Hong
คำค้น : DRNTU::Engineering::Mechanical engineering::Control engineering
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2557
อ้างอิง : Shim, J., Kang, D. H., Yoo, G., Hong, S. T., Jung, W. S., Kuh, B. J., et al. (2014). Germanium p-i-n avalanche photodetector fabricated by point defect healing process. Optics Letters, 39(14), 4204-4207. , http://hdl.handle.net/10220/20317 , http://dx.doi.org/10.1364/OL.39.004204
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Optics letters
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

In this Letter, we report Ge p-i-n avalanche photodetectors (APD) with low dark current (sub 1 μA below VR=5  V), low operating voltage (avalanche breakdown voltage=8–13  V), and high multiplication gain (440–680) by exploiting a point defect healing method (between 600°C and 650°C) and optimizing the doping concentration of the intrinsic region (p-type ∼1017  cm−3). In addition, Raman spectroscopy and electrochemical capacitance voltage analyses were performed to investigate the junction interfaces in more detail. This successful demonstration of Ge p-i-n APD with low dark current, low operating voltage, and high gain is promising for low-power and high-sensitivity Ge PD applications.

บรรณานุกรม :
Shim, Jae Woo , Kang, Dong-Ho , Yoo, Gwangwe , Hong, Seong-Taek , Jung, Woo-Shik , Kuh, Bong Jin , Lee, Beomsuk , Shin, Dongjae , Ha, Kyoungho , Kim, Gwang Sik , Yu, Hyun-Yong , Baek, Jung Woo , Park, Jin-Hong . (2557). Germanium p-i-n avalanche photodetector fabricated by point defect healing process.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Shim, Jae Woo , Kang, Dong-Ho , Yoo, Gwangwe , Hong, Seong-Taek , Jung, Woo-Shik , Kuh, Bong Jin , Lee, Beomsuk , Shin, Dongjae , Ha, Kyoungho , Kim, Gwang Sik , Yu, Hyun-Yong , Baek, Jung Woo , Park, Jin-Hong . 2557. "Germanium p-i-n avalanche photodetector fabricated by point defect healing process".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Shim, Jae Woo , Kang, Dong-Ho , Yoo, Gwangwe , Hong, Seong-Taek , Jung, Woo-Shik , Kuh, Bong Jin , Lee, Beomsuk , Shin, Dongjae , Ha, Kyoungho , Kim, Gwang Sik , Yu, Hyun-Yong , Baek, Jung Woo , Park, Jin-Hong . "Germanium p-i-n avalanche photodetector fabricated by point defect healing process."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2557. Print.
Shim, Jae Woo , Kang, Dong-Ho , Yoo, Gwangwe , Hong, Seong-Taek , Jung, Woo-Shik , Kuh, Bong Jin , Lee, Beomsuk , Shin, Dongjae , Ha, Kyoungho , Kim, Gwang Sik , Yu, Hyun-Yong , Baek, Jung Woo , Park, Jin-Hong . Germanium p-i-n avalanche photodetector fabricated by point defect healing process. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2557.