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Leakage current and structural analysis of annealed HfO2/La2O3 and CeO2/La2O3 dielectric stacks : a nanoscopic study

หน่วยงาน Nanyang Technological University, Singapore

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ชื่อเรื่อง : Leakage current and structural analysis of annealed HfO2/La2O3 and CeO2/La2O3 dielectric stacks : a nanoscopic study
นักวิจัย : Shubhakar, Kalya , Pey, Kin Leong , Bosman, Michel , Kushvaha, Sunil Singh , O'Shea, Sean Joseph , Kouda, Miyuki , Kakushima, Kuniyuki , Iwai, Hiroshi
คำค้น : DRNTU::Engineering::Electrical and electronic engineering
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2557
อ้างอิง : Shubhakar, K., Pey, K. L., Bosman, M., Kushvaha, S. S., O'Shea, S. J., Kouda, M., et al. (2014). Leakage current and structural analysis of annealed HfO2/La2O3 and CeO2/La2O3 dielectric stacks: A nanoscopic study. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 32(3), 03D125-. , 2166-2746 , http://hdl.handle.net/10220/19769 , http://dx.doi.org/10.1116/1.4876335
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Journal of vacuum science & technology B: microelectronics and nanometer structures
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

Grain boundaries in the polycrystalline microstructure of post-annealed high-κ (HK) dielectrics are a major limitation in the reliability of HK dielectrics used for advanced CMOS technologies. Another challenge in the field of HK dielectrics is to ensure higher drain drive current in CMOS, while maintaining low leakage current. In this work, the authors demonstrate enhanced performance of HfO2 and CeO2 dielectrics by incorporating lanthanum. The resulting stacks show promising dielectric characteristics with reduced leakage current and uniform (amorphous) crystal structure. The improved HK characteristics were shown to occur even over nanometer-length scales using scanning probe microscopy and transmission electron microscopy, in agreement with previous studies based on micron-scale device-level measurement.

บรรณานุกรม :
Shubhakar, Kalya , Pey, Kin Leong , Bosman, Michel , Kushvaha, Sunil Singh , O'Shea, Sean Joseph , Kouda, Miyuki , Kakushima, Kuniyuki , Iwai, Hiroshi . (2557). Leakage current and structural analysis of annealed HfO2/La2O3 and CeO2/La2O3 dielectric stacks : a nanoscopic study.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Shubhakar, Kalya , Pey, Kin Leong , Bosman, Michel , Kushvaha, Sunil Singh , O'Shea, Sean Joseph , Kouda, Miyuki , Kakushima, Kuniyuki , Iwai, Hiroshi . 2557. "Leakage current and structural analysis of annealed HfO2/La2O3 and CeO2/La2O3 dielectric stacks : a nanoscopic study".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Shubhakar, Kalya , Pey, Kin Leong , Bosman, Michel , Kushvaha, Sunil Singh , O'Shea, Sean Joseph , Kouda, Miyuki , Kakushima, Kuniyuki , Iwai, Hiroshi . "Leakage current and structural analysis of annealed HfO2/La2O3 and CeO2/La2O3 dielectric stacks : a nanoscopic study."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2557. Print.
Shubhakar, Kalya , Pey, Kin Leong , Bosman, Michel , Kushvaha, Sunil Singh , O'Shea, Sean Joseph , Kouda, Miyuki , Kakushima, Kuniyuki , Iwai, Hiroshi . Leakage current and structural analysis of annealed HfO2/La2O3 and CeO2/La2O3 dielectric stacks : a nanoscopic study. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2557.