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Room temperature magnetic graphene oxide- iron oxide nanocomposite based magnetoresistive random access memory devices via spin-dependent trapping of electrons

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Room temperature magnetic graphene oxide- iron oxide nanocomposite based magnetoresistive random access memory devices via spin-dependent trapping of electrons
นักวิจัย : Lin, Aigu L. , Peng, Haiyang , Liu, Zhiqi , Wu, Tom , Su, Chenliang , Loh, Kian Ping , Ariando , Chen, Wei , Wee, Andrew T. S.
คำค้น : DRNTU::Science::Chemistry
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2557
อ้างอิง : Lin, A. L., Peng, H., Liu, Z., Wu, T., Su, C., Loh, K. P., et al. (2014). Room Temperature Magnetic Graphene Oxide- Iron Oxide Nanocomposite Based Magnetoresistive Random Access Memory Devices via Spin-Dependent Trapping of Electrons. Small, 10(10), 1945–1952. , 1613-6810 , http://hdl.handle.net/10220/19751 , http://dx.doi.org/10.1002/smll.201302986
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Small
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

A MRAM device is fabricated using magnetic graphene oxide- iron oxide nanoparticles nanocomposites together with a platinum electrode and a ferromagnetic cobalt electrode. The device allow for a positive magnetoresistance up to 280% via the spin-dependent trapping of charge carriers. Its low resistance state can be restored by releasing the trapped charges by reversing the direction of current flow together with the magnetic field orientation.

บรรณานุกรม :
Lin, Aigu L. , Peng, Haiyang , Liu, Zhiqi , Wu, Tom , Su, Chenliang , Loh, Kian Ping , Ariando , Chen, Wei , Wee, Andrew T. S. . (2557). Room temperature magnetic graphene oxide- iron oxide nanocomposite based magnetoresistive random access memory devices via spin-dependent trapping of electrons.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Lin, Aigu L. , Peng, Haiyang , Liu, Zhiqi , Wu, Tom , Su, Chenliang , Loh, Kian Ping , Ariando , Chen, Wei , Wee, Andrew T. S. . 2557. "Room temperature magnetic graphene oxide- iron oxide nanocomposite based magnetoresistive random access memory devices via spin-dependent trapping of electrons".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Lin, Aigu L. , Peng, Haiyang , Liu, Zhiqi , Wu, Tom , Su, Chenliang , Loh, Kian Ping , Ariando , Chen, Wei , Wee, Andrew T. S. . "Room temperature magnetic graphene oxide- iron oxide nanocomposite based magnetoresistive random access memory devices via spin-dependent trapping of electrons."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2557. Print.
Lin, Aigu L. , Peng, Haiyang , Liu, Zhiqi , Wu, Tom , Su, Chenliang , Loh, Kian Ping , Ariando , Chen, Wei , Wee, Andrew T. S. . Room temperature magnetic graphene oxide- iron oxide nanocomposite based magnetoresistive random access memory devices via spin-dependent trapping of electrons. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2557.