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Electrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantation

หน่วยงาน Nanyang Technological University, Singapore

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ชื่อเรื่อง : Electrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantation
นักวิจัย : Fedorenko, Yanina G. , Hughes, Mark A. , Colaux, Julien L. , Jeynes, C. , Gwilliam, Russell M. , Homewood, Kevin P. , Yao, Jin , Hewak, Dan W. , Lee, Tae-Hoon , Elliott, Stephen R. , Gholipour, B. , Curry, Richard J.
คำค้น : DRNTU::Science
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : Digonnet, Michel J. F. , Jiang, Shibin
ปีพิมพ์ : 2557
อ้างอิง : Fedorenko, Y. G., Hughes, M. A., Colaux, J. L., Jeynes, C., Gwilliam, R. M., Homewood, K. P., et al. (2014). Electrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantation, Proceeding of SPIE 8982, Optical Components and Materials XI, 898213-. , http://hdl.handle.net/10220/19677 , http://dx.doi.org/10.1117/12.2037965
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บทคัดย่อ/คำอธิบาย :

Doping of amorphous chalcogenide films of rather dissimilar bonding type and resistivity, namely, Ga-La-S, GeTe, and Ge-Sb-Te by means of ion implantation of bismuth is considered. To characterize defects induced by ionbeam implantation space-charge-limited conduction and capacitance-voltage characteristics of amorphous chalcogenide/silicon heterojunctions are investigated. It is shown that ion implantation introduces substantial defect densities in the films and their interfaces with silicon. This comes along with a gradual decrease in the resistivity and the thermopower coefficient. It is shown that conductivity in GeTe and Ge-Sb-Te films is consistent with the two-type carrier conduction model. It is anticipated that ion implantation renders electrons to become less localized than holes leading to electron conductivity in certain cases as, for example, in GeTe.

บรรณานุกรม :
Fedorenko, Yanina G. , Hughes, Mark A. , Colaux, Julien L. , Jeynes, C. , Gwilliam, Russell M. , Homewood, Kevin P. , Yao, Jin , Hewak, Dan W. , Lee, Tae-Hoon , Elliott, Stephen R. , Gholipour, B. , Curry, Richard J. . (2557). Electrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantation.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Fedorenko, Yanina G. , Hughes, Mark A. , Colaux, Julien L. , Jeynes, C. , Gwilliam, Russell M. , Homewood, Kevin P. , Yao, Jin , Hewak, Dan W. , Lee, Tae-Hoon , Elliott, Stephen R. , Gholipour, B. , Curry, Richard J. . 2557. "Electrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantation".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Fedorenko, Yanina G. , Hughes, Mark A. , Colaux, Julien L. , Jeynes, C. , Gwilliam, Russell M. , Homewood, Kevin P. , Yao, Jin , Hewak, Dan W. , Lee, Tae-Hoon , Elliott, Stephen R. , Gholipour, B. , Curry, Richard J. . "Electrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantation."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2557. Print.
Fedorenko, Yanina G. , Hughes, Mark A. , Colaux, Julien L. , Jeynes, C. , Gwilliam, Russell M. , Homewood, Kevin P. , Yao, Jin , Hewak, Dan W. , Lee, Tae-Hoon , Elliott, Stephen R. , Gholipour, B. , Curry, Richard J. . Electrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantation. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2557.