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Recovery from ultraviolet-induced threshold voltage shift in indium gallium zinc oxide thin film transistors by positive gate bias

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Recovery from ultraviolet-induced threshold voltage shift in indium gallium zinc oxide thin film transistors by positive gate bias
นักวิจัย : Liu, P. , Chen, Tupei , Li, X. D. , Liu, Z. , Wong, J. I. , Liu, Y. , Leong, K. C.
คำค้น : DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2556
อ้างอิง : Liu, P., Chen, T., Li, X. D., Liu, Z., Wong, J. I., Liu, Y., et al. (2013). Recovery from ultraviolet-induced threshold voltage shift in indium gallium zinc oxide thin film transistors by positive gate bias. Applied physics letters, 103(20), 202110. , 0003-6951 , http://hdl.handle.net/10220/18610 , http://dx.doi.org/10.1063/1.4830368
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Applied physics letters
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

The effect of short-duration ultraviolet (UV) exposure on the threshold voltage (Vth) of amorphous indium gallium zinc oxide thin film transistors (TFTs) and its recovery characteristics were investigated. The Vth exhibited a significant negative shift after UV exposure. The Vth instability caused by UV illumination is attributed to the positive charge trapping in the dielectric layer and/or at the channel/dielectric interface. The illuminated devices showed a slow recovery in threshold voltage without external bias. However, an instant recovery can be achieved by the application of positive gate pulses, which is due to the elimination of the positive trapped charges as a result of the presence of a large amount of field-induced electrons in the interface region.

บรรณานุกรม :
Liu, P. , Chen, Tupei , Li, X. D. , Liu, Z. , Wong, J. I. , Liu, Y. , Leong, K. C. . (2556). Recovery from ultraviolet-induced threshold voltage shift in indium gallium zinc oxide thin film transistors by positive gate bias.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Liu, P. , Chen, Tupei , Li, X. D. , Liu, Z. , Wong, J. I. , Liu, Y. , Leong, K. C. . 2556. "Recovery from ultraviolet-induced threshold voltage shift in indium gallium zinc oxide thin film transistors by positive gate bias".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Liu, P. , Chen, Tupei , Li, X. D. , Liu, Z. , Wong, J. I. , Liu, Y. , Leong, K. C. . "Recovery from ultraviolet-induced threshold voltage shift in indium gallium zinc oxide thin film transistors by positive gate bias."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2556. Print.
Liu, P. , Chen, Tupei , Li, X. D. , Liu, Z. , Wong, J. I. , Liu, Y. , Leong, K. C. . Recovery from ultraviolet-induced threshold voltage shift in indium gallium zinc oxide thin film transistors by positive gate bias. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2556.