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Intrinsic nanofilamentation in resistive switching

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Intrinsic nanofilamentation in resistive switching
นักวิจัย : Wu, Xing , Cha, Dongkyu , Bosman, Michel , Raghavan, Nagarajan , Migas, Dmitri B. , Borisenko, Victor E. , Zhang, Xi Xiang , Li, Kun , Pey, Kin Leong
คำค้น : DRNTU::Science::Physics::Electricity and magnetism
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2556
อ้างอิง : Wu, X., Cha, D., Bosman, M., Raghavan, N., Migas, D. B., Borisenko, V. E., and et al. (2013). Intrinsic nanofilamentation in resistive switching. Journal of Applied Physics, 113(11), 114503-. , 0021-8979 , http://hdl.handle.net/10220/18627 , http://dx.doi.org/10.1063/1.4794519
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Journal of applied physics
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

Resistive switching materials are promising candidates for nonvolatile data storage and reconfiguration of electronic applications. Intensive studies have been carried out on sandwiched metal-insulator-metal structures to achieve high density on-chip circuitry and non-volatile memory storage. Here, we provide insight into the mechanisms that govern highly reproducible controlled resistive switching via a nanofilament by using an asymmetric metal-insulator-semiconductor structure. In-situ transmission electron microscopy is used to study in real-time the physical structure and analyze the chemical composition of the nanofilament dynamically during resistive switching. Electrical stressing using an external voltage was applied by a tungsten tip to the nanosized devices having hafnium oxide (HfO2) as the insulator layer. The formation and rupture of the nanofilaments result in up to three orders of magnitude change in the current flowing through the dielectric during the switching event. Oxygen vacancies and metal atoms from the anode constitute the chemistry of the nanofilament.

บรรณานุกรม :
Wu, Xing , Cha, Dongkyu , Bosman, Michel , Raghavan, Nagarajan , Migas, Dmitri B. , Borisenko, Victor E. , Zhang, Xi Xiang , Li, Kun , Pey, Kin Leong . (2556). Intrinsic nanofilamentation in resistive switching.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Wu, Xing , Cha, Dongkyu , Bosman, Michel , Raghavan, Nagarajan , Migas, Dmitri B. , Borisenko, Victor E. , Zhang, Xi Xiang , Li, Kun , Pey, Kin Leong . 2556. "Intrinsic nanofilamentation in resistive switching".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Wu, Xing , Cha, Dongkyu , Bosman, Michel , Raghavan, Nagarajan , Migas, Dmitri B. , Borisenko, Victor E. , Zhang, Xi Xiang , Li, Kun , Pey, Kin Leong . "Intrinsic nanofilamentation in resistive switching."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2556. Print.
Wu, Xing , Cha, Dongkyu , Bosman, Michel , Raghavan, Nagarajan , Migas, Dmitri B. , Borisenko, Victor E. , Zhang, Xi Xiang , Li, Kun , Pey, Kin Leong . Intrinsic nanofilamentation in resistive switching. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2556.