| ชื่อเรื่อง | : | Effect of Ge diffusion on AlxGa1-xN/GaN high electron mobility transistors on a thin silicon-on-insulator |
| นักวิจัย | : | Bera, L. K. , Tham, W. H. , Kajen, R. S. , Dolmanan, S. B. , Kumar, M. Krishna , Lin, Vivian Kaixin , Ang, Diing Shenp , Bhat, T. N. , Yakovlev, N. , Tripathy, Sudhiranjan |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering. |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2556 |
| อ้างอิง | : | Bera, L. K., Tham, W. H., Kajen, R. S., Dolmanan, S. B., Kumar, M. K., Lin, V. K. X., et al. (2013). Effect of Ge diffusion on AlxGa1-xN/GaN high electron mobility transistors on a thin silicon-on-insulator. ECS solid state letters, 2(12), Q105-Q108. , http://hdl.handle.net/10220/18382 , http://dx.doi.org/10.1149/2.002312ssl |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | ECS solid state letters |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | In this letter, the effect of Ge diffusion at the gate area of AlxGa1-xN/GaN high electron mobility transistors (HEMTs) on a thin silicon-on-insulator (SOI) substrate has been investigated. The pinch-off voltage shifted toward enhancement mode type operation behavior due to the Ge diffusion through the surface of the thin GaN cap layer. An anomalous hump observed in high frequency C-V plot is due to the electron confinement at the Ge-GaN/AlGaN interface. The threshold voltage reduces by 0.8 to 1.0 V after Ge diffusion. The drive current and the transconductance further reduced as compared to the control sample due to the parallel channel formation at the top Ge-GaN/AlxGa1-xN interfaces. |
| บรรณานุกรม | : |
Bera, L. K. , Tham, W. H. , Kajen, R. S. , Dolmanan, S. B. , Kumar, M. Krishna , Lin, Vivian Kaixin , Ang, Diing Shenp , Bhat, T. N. , Yakovlev, N. , Tripathy, Sudhiranjan . (2556). Effect of Ge diffusion on AlxGa1-xN/GaN high electron mobility transistors on a thin silicon-on-insulator.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Bera, L. K. , Tham, W. H. , Kajen, R. S. , Dolmanan, S. B. , Kumar, M. Krishna , Lin, Vivian Kaixin , Ang, Diing Shenp , Bhat, T. N. , Yakovlev, N. , Tripathy, Sudhiranjan . 2556. "Effect of Ge diffusion on AlxGa1-xN/GaN high electron mobility transistors on a thin silicon-on-insulator".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Bera, L. K. , Tham, W. H. , Kajen, R. S. , Dolmanan, S. B. , Kumar, M. Krishna , Lin, Vivian Kaixin , Ang, Diing Shenp , Bhat, T. N. , Yakovlev, N. , Tripathy, Sudhiranjan . "Effect of Ge diffusion on AlxGa1-xN/GaN high electron mobility transistors on a thin silicon-on-insulator."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2556. Print. Bera, L. K. , Tham, W. H. , Kajen, R. S. , Dolmanan, S. B. , Kumar, M. Krishna , Lin, Vivian Kaixin , Ang, Diing Shenp , Bhat, T. N. , Yakovlev, N. , Tripathy, Sudhiranjan . Effect of Ge diffusion on AlxGa1-xN/GaN high electron mobility transistors on a thin silicon-on-insulator. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2556.
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