ridm@nrct.go.th   ระบบคลังข้อมูลงานวิจัยไทย   รายการโปรดที่คุณเลือกไว้

GaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24 μm

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : GaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24 μm
นักวิจัย : Ma, B. S. , Fan, Weijun , Dang, Y. X. , Cheah, Weng Kwong , Loke, Wan Khai , Liu, W. , Li, D. S. , Yoon, Soon Fatt , Zhang, Dao Hua , Wang, H. , Tung, Chih Hang
คำค้น : -
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2550
อ้างอิง : Ma, B. S., Fan, W., Dang, Y. X., Cheah, W. K., Loke, W. K., Liu, W., Li, D. S., Yoon, S. F., Zhang, D. H., Wang, H., & Tung, C. H. (2007). GaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24 μm. Applied physics letters, 91(5), 051102. , 0003-6951 , http://hdl.handle.net/10220/18144 , http://dx.doi.org/10.1063/1.2767185
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Applied physics letters
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

A GaInNAs/AlAs/AlGaAs double-barrier quantum well infrared photodetector was grown by molecular beam epitaxy and fabricated by standard device processes. The growth structure of the as-grown sample was verified by x-ray diffraction measurement. The photoluminescence emission peak, which is related to the interband transition in the GaInNAs well, was observed at 1.2 eV. After annealing at 650 °C, a large blueshift of 40 meV was observed. The photocurrent peak at 1.24 m is associated with the intersubband transitions in the conduction band of the GaInNAs quantum well. The ten-band k· p calculations agree with the above observations.

บรรณานุกรม :
Ma, B. S. , Fan, Weijun , Dang, Y. X. , Cheah, Weng Kwong , Loke, Wan Khai , Liu, W. , Li, D. S. , Yoon, Soon Fatt , Zhang, Dao Hua , Wang, H. , Tung, Chih Hang . (2550). GaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24 μm.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Ma, B. S. , Fan, Weijun , Dang, Y. X. , Cheah, Weng Kwong , Loke, Wan Khai , Liu, W. , Li, D. S. , Yoon, Soon Fatt , Zhang, Dao Hua , Wang, H. , Tung, Chih Hang . 2550. "GaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24 μm".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Ma, B. S. , Fan, Weijun , Dang, Y. X. , Cheah, Weng Kwong , Loke, Wan Khai , Liu, W. , Li, D. S. , Yoon, Soon Fatt , Zhang, Dao Hua , Wang, H. , Tung, Chih Hang . "GaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24 μm."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2550. Print.
Ma, B. S. , Fan, Weijun , Dang, Y. X. , Cheah, Weng Kwong , Loke, Wan Khai , Liu, W. , Li, D. S. , Yoon, Soon Fatt , Zhang, Dao Hua , Wang, H. , Tung, Chih Hang . GaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24 μm. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2550.