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Interpretation of an anomalous peak in low-temperature photoluminescence measurements of bulk GaAs[sub 1−x]N[sub x] on GaAs

หน่วยงาน Nanyang Technological University, Singapore

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ชื่อเรื่อง : Interpretation of an anomalous peak in low-temperature photoluminescence measurements of bulk GaAs[sub 1−x]N[sub x] on GaAs
นักวิจัย : Cheah, Weng Kwong , Fan, Weijun , Yoon, Soon Fatt , Loke, Wan Khai , Liu, R. , Wee, A. T. S.
คำค้น : DRNTU::Engineering::Electrical and electronic engineering
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2549
อ้างอิง : Cheah, W. K., Fan, W., Yoon, S. F., Loke, W. K., Liu, R., & Wee, A. T. S. (2006). Interpretation of an anomalous peak in low-temperature photoluminescence measurements of bulk GaAs[sub 1−x]N[sub x] on GaAs. Journal of applied physics, 99(10), 104908. , 0021-8979 , http://hdl.handle.net/10220/17894 , http://dx.doi.org/10.1063/1.2199976
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Journal of applied physics
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

Low-temperature 10 K photoluminescence measurements of GaAs1−xNx epitaxial layers grown on GaAs reveal an anomalous second peak in solid-source molecular beam epitaxy. Rapid thermal annealing RTA of a specific GaAsN sample reveals a lower energy peak which redshifts and a higher energy peak which blueshifts under increasing annealing temperature. The band-anticrossing model is used to identify the origins of the two peaks and we propose a model to explain the RTA observations by the concept of increased confinement in areas of higher N concentrations by trapped N localized states. The peak is due to the accumulation of N content near the GaAs/GaAsN interface. Hence, this abnormal annealing behavior occurs in layers with nonuniform N concentration at the GaAsN/GaAs interface.

บรรณานุกรม :
Cheah, Weng Kwong , Fan, Weijun , Yoon, Soon Fatt , Loke, Wan Khai , Liu, R. , Wee, A. T. S. . (2549). Interpretation of an anomalous peak in low-temperature photoluminescence measurements of bulk GaAs[sub 1−x]N[sub x] on GaAs.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Cheah, Weng Kwong , Fan, Weijun , Yoon, Soon Fatt , Loke, Wan Khai , Liu, R. , Wee, A. T. S. . 2549. "Interpretation of an anomalous peak in low-temperature photoluminescence measurements of bulk GaAs[sub 1−x]N[sub x] on GaAs".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Cheah, Weng Kwong , Fan, Weijun , Yoon, Soon Fatt , Loke, Wan Khai , Liu, R. , Wee, A. T. S. . "Interpretation of an anomalous peak in low-temperature photoluminescence measurements of bulk GaAs[sub 1−x]N[sub x] on GaAs."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2549. Print.
Cheah, Weng Kwong , Fan, Weijun , Yoon, Soon Fatt , Loke, Wan Khai , Liu, R. , Wee, A. T. S. . Interpretation of an anomalous peak in low-temperature photoluminescence measurements of bulk GaAs[sub 1−x]N[sub x] on GaAs. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2549.