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Comparison of nitrogen compositions in the as-grown GaN[sub x]As[sub 1−x] on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopy

หน่วยงาน Nanyang Technological University, Singapore

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ชื่อเรื่อง : Comparison of nitrogen compositions in the as-grown GaN[sub x]As[sub 1−x] on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopy
นักวิจัย : Fan, Weijun , Yoon, Soon Fatt , Ng, T. K. , Wang, S. Z. , Loke, Wan Khai , Liu, R. , Wee, A.
คำค้น : DRNTU::Engineering::Electrical and electronic engineering.
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2545
อ้างอิง : Fan, W., Yoon, S. F., Ng, T. K., Wang, S. Z., Loke, W. K., Liu, R., & Wee, A. (2002). Comparison of nitrogen compositions in the as-grown GaN[sub x]As[sub 1−x] on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopy. Applied physics letters, 80(22), 4136. , 0003-6951 , http://hdl.handle.net/10220/18003 , http://dx.doi.org/10.1063/1.1483913
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Applied physics letters
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

High-resolution x-ray diffraction (HRXRD) and secondary-ion mass spectroscopy were used to measure the N compositions of a series of as-grown GaNAs samples grown by solid-source molecular-beam epitaxy. We found that N compositions measured by the two methods agree well at lower N compositions (x<3%) and deviate at larger N (x>3%)compositions. The HRXRD measurement by using Vegard’s law to extract the lattice constant of GaNAs, underestimates N composition at larger N compositions. We found that the underestimation is up to 14.3% at the x=4.2%. In order to explain the deviation, a model for analyzing the correlation between lattice parameters and point defects in the epilayer was carried out.

บรรณานุกรม :
Fan, Weijun , Yoon, Soon Fatt , Ng, T. K. , Wang, S. Z. , Loke, Wan Khai , Liu, R. , Wee, A. . (2545). Comparison of nitrogen compositions in the as-grown GaN[sub x]As[sub 1−x] on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopy.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Fan, Weijun , Yoon, Soon Fatt , Ng, T. K. , Wang, S. Z. , Loke, Wan Khai , Liu, R. , Wee, A. . 2545. "Comparison of nitrogen compositions in the as-grown GaN[sub x]As[sub 1−x] on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopy".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Fan, Weijun , Yoon, Soon Fatt , Ng, T. K. , Wang, S. Z. , Loke, Wan Khai , Liu, R. , Wee, A. . "Comparison of nitrogen compositions in the as-grown GaN[sub x]As[sub 1−x] on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopy."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2545. Print.
Fan, Weijun , Yoon, Soon Fatt , Ng, T. K. , Wang, S. Z. , Loke, Wan Khai , Liu, R. , Wee, A. . Comparison of nitrogen compositions in the as-grown GaN[sub x]As[sub 1−x] on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopy. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2545.