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Influence of N doping on the Rashba coefficient, semiconductor-metal transition, and electron effective mass in InSb1−xNx nanowires : Ten-band k∙p model

หน่วยงาน Nanyang Technological University, Singapore

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ชื่อเรื่อง : Influence of N doping on the Rashba coefficient, semiconductor-metal transition, and electron effective mass in InSb1−xNx nanowires : Ten-band k∙p model
นักวิจัย : Zhang, X. , Fan, Weijun , Li, S. , Xia, J.
คำค้น : -
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2550
อ้างอิง : Zhang, X. W., Fan, W. J., Li, S. S., & Xia, J. B. (2007). Influence of N doping on the Rashba coefficient, semiconductor-metal transition, and electron effective mass in InSb1−xNx nanowires: Ten-band k∙p model. Physical Review B, 75(20), 205331(6 pages). , http://hdl.handle.net/10220/17869 , http://dx.doi.org/10.1103/PhysRevB.75.205331
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Physical review B
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

The electronic structures of InSb1−xNx nanowires are investigated using the ten-band k·p method. It is found that nitrogen increases the Rashba coefficient of the nanowires dramatically. For thick nanowires, the Rashba coefficient may increase by more than 20 times. The semiconductor-metal transition occurs more easily in InSb1−xNx nanowires than in InSb nanowires. The electronic structure of InSb1−xNx nanowires is very different from that of the bulk material. For fixed x the bulk material is a semimetal, while the nanowires are metal-like. In InSb1−xNx bulk material and thick nanowires, an interesting decrease of electron effective mass is observed near k=0 which is induced by the nitrogen, but this phenomenon disappears in thin nanowires.

บรรณานุกรม :
Zhang, X. , Fan, Weijun , Li, S. , Xia, J. . (2550). Influence of N doping on the Rashba coefficient, semiconductor-metal transition, and electron effective mass in InSb1−xNx nanowires : Ten-band k∙p model.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Zhang, X. , Fan, Weijun , Li, S. , Xia, J. . 2550. "Influence of N doping on the Rashba coefficient, semiconductor-metal transition, and electron effective mass in InSb1−xNx nanowires : Ten-band k∙p model".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Zhang, X. , Fan, Weijun , Li, S. , Xia, J. . "Influence of N doping on the Rashba coefficient, semiconductor-metal transition, and electron effective mass in InSb1−xNx nanowires : Ten-band k∙p model."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2550. Print.
Zhang, X. , Fan, Weijun , Li, S. , Xia, J. . Influence of N doping on the Rashba coefficient, semiconductor-metal transition, and electron effective mass in InSb1−xNx nanowires : Ten-band k∙p model. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2550.