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Mechanism of graphene oxide as a growth template for complete reduced graphene oxide coverage on SiO2 substrate

หน่วยงาน Nanyang Technological University, Singapore

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ชื่อเรื่อง : Mechanism of graphene oxide as a growth template for complete reduced graphene oxide coverage on SiO2 substrate
นักวิจัย : Huang, Jingfeng , Fam, Derrick Wen Hui , He, Qiyuan , Chen, Hu , Zhan, Da , Faulkner, Steve , Nimmo, Myra A. , Tok, Alfred Iing Yoong
คำค้น : DRNTU::Engineering::Materials.
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2556
อ้างอิง : Huang, J., Fam, D. W. H., He, Q., Chen, H., Zhan, D., Faulkner, S., Nimmo, M. A., & Tok, A. I. Y. (2013). Mechanism of graphene oxide as a growth template for complete reduced graphene oxide coverage on SiO2 substrate. Journal of Materials Chemistry C, 2(1), 109-114. , http://hdl.handle.net/10220/17590 , http://dx.doi.org/10.1039/c3tc31529k
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Journal of materials chemistry C
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

Reduced Graphene Oxide (rGO) has the distinct advantage of an aqueous and industrial-scalable production route. However large deviation in the electrical resistivity of fabricated rGO devices, caused by inhomogeneous coverage of rGO on the substrate, prevents its practical application in electronic devices. This critical problem could be solved by using an ethanol chemical vapour deposition (CVD) treatment on the graphene oxide (GO). With the treatment, not only GO was reduced to rGO, rGO new growths preferentially grow outwards from the edges of the existing GO template and enlarge in size until rGO completely covered the substrate. The growth sequence was presented and our results indicate that the growth support the free radical condensate growth mechanism. After the ethanol CVD treatment, the standard deviation in electrical resistivity decreased significantly by 99.95% (1.60E+06 to 7.72E+02 Ω/square) in comparison to hydrazine-reduced rGO substrates. As no carbon signatures on the substrate were observed if no template was used; this work indicate that GO could act as template for subsequent formation of rGO.

EDB (Economic Devt. Board, S’pore)

บรรณานุกรม :
Huang, Jingfeng , Fam, Derrick Wen Hui , He, Qiyuan , Chen, Hu , Zhan, Da , Faulkner, Steve , Nimmo, Myra A. , Tok, Alfred Iing Yoong . (2556). Mechanism of graphene oxide as a growth template for complete reduced graphene oxide coverage on SiO2 substrate.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Huang, Jingfeng , Fam, Derrick Wen Hui , He, Qiyuan , Chen, Hu , Zhan, Da , Faulkner, Steve , Nimmo, Myra A. , Tok, Alfred Iing Yoong . 2556. "Mechanism of graphene oxide as a growth template for complete reduced graphene oxide coverage on SiO2 substrate".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Huang, Jingfeng , Fam, Derrick Wen Hui , He, Qiyuan , Chen, Hu , Zhan, Da , Faulkner, Steve , Nimmo, Myra A. , Tok, Alfred Iing Yoong . "Mechanism of graphene oxide as a growth template for complete reduced graphene oxide coverage on SiO2 substrate."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2556. Print.
Huang, Jingfeng , Fam, Derrick Wen Hui , He, Qiyuan , Chen, Hu , Zhan, Da , Faulkner, Steve , Nimmo, Myra A. , Tok, Alfred Iing Yoong . Mechanism of graphene oxide as a growth template for complete reduced graphene oxide coverage on SiO2 substrate. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2556.