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Realizing a SnO2-based ultraviolet light-emitting diode via breaking the dipole-forbidden rule

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Realizing a SnO2-based ultraviolet light-emitting diode via breaking the dipole-forbidden rule
นักวิจัย : Li, Yongfeng , Yin, Wanjian , Deng, Rui , Chen, Rui , Chen, Jing , Yan, Qingyu , Yao, Bin , Sun, Handong , Wei, Su-Huai , Wu, Tom
คำค้น : -
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2555
อ้างอิง : Li, Y., Yin, W., Deng, R., Chen, R., Chen, J., Yan, Q., et al. (2012). Realizing a SnO2-based ultraviolet light-emitting diode via breaking the dipole-forbidden rule. NPG Asia Materials, 4, e30-. , 1884-4057 , http://hdl.handle.net/10220/17569 , http://dx.doi.org/10.1038/am.2012.56
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : NPG Asia materials
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

Although many oxide semiconductors possess wide bandgaps in the ultraviolet (UV) regime, currently the majority of them cannot efficiently emit UV light because the band-edge optical transition is forbidden in a perfect lattice as a result of the symmetry of the band-edge states. This quantum mechanical rule severely constrains the optical applications of wide-bandgap oxides, which is also the reason why so few oxides enjoy the success of ZnO. Here, using SnO2 as an example, we demonstrate both theoretically and experimentally that UV photoluminescence and electroluminescence can be recovered and enhanced in wide-bandgap oxide thin films with ‘forbidden’ energy gaps by engineering their nanocrystalline structures. In our experiments, the tailored low-temperature annealing process results in a hybrid structure containing SnO2 nanocrystals in an amorphous matrix, and UV emission is observed in such hybrid SnO2 thin films, indicating that the quantum mechanical dipole-forbidden rule has been effectively overcome. Using this approach, we demonstrate the first prototypical electrically pumped UV-light-emitting diode based on nanostructured SnO2 thin films.

บรรณานุกรม :
Li, Yongfeng , Yin, Wanjian , Deng, Rui , Chen, Rui , Chen, Jing , Yan, Qingyu , Yao, Bin , Sun, Handong , Wei, Su-Huai , Wu, Tom . (2555). Realizing a SnO2-based ultraviolet light-emitting diode via breaking the dipole-forbidden rule.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Li, Yongfeng , Yin, Wanjian , Deng, Rui , Chen, Rui , Chen, Jing , Yan, Qingyu , Yao, Bin , Sun, Handong , Wei, Su-Huai , Wu, Tom . 2555. "Realizing a SnO2-based ultraviolet light-emitting diode via breaking the dipole-forbidden rule".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Li, Yongfeng , Yin, Wanjian , Deng, Rui , Chen, Rui , Chen, Jing , Yan, Qingyu , Yao, Bin , Sun, Handong , Wei, Su-Huai , Wu, Tom . "Realizing a SnO2-based ultraviolet light-emitting diode via breaking the dipole-forbidden rule."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2555. Print.
Li, Yongfeng , Yin, Wanjian , Deng, Rui , Chen, Rui , Chen, Jing , Yan, Qingyu , Yao, Bin , Sun, Handong , Wei, Su-Huai , Wu, Tom . Realizing a SnO2-based ultraviolet light-emitting diode via breaking the dipole-forbidden rule. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2555.