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Analytical models for the electric potential, threshold voltage and drain current of long-channel junctionless double-gate transistors

หน่วยงาน Nanyang Technological University, Singapore

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ชื่อเรื่อง : Analytical models for the electric potential, threshold voltage and drain current of long-channel junctionless double-gate transistors
นักวิจัย : Ding, Zhihao , Hu, Guangxi , Liu, Ran , Wang, Lingli , Hu, Shuyan , Zhou, Xing
คำค้น : DRNTU::Engineering::Electrical and electronic engineering.
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2556
อ้างอิง : Ding, Z., Hu, G., Liu, R., Wang, L., Hu, S., & Zhou, X. (2013). Analytical models for the electric potential, threshold voltage and drain current of long-channel junctionless double-gate transistors. Journal of the korean physical society, 62(8), 1188-1193. , http://hdl.handle.net/10220/17701 , http://dx.doi.org/10.3938/jkps.62.1188
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Journal of the korean physical society
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

Analytical models for the electric potential, threshold voltage and drain current of long-channel junctionless (JL) double-gate (DG) field-effect transistors (FET) are presented. A regional method is used to solve the Poisson equation under different gate biases, and the electric potential is obtained. With the potential model, an analytical expression for the threshold voltage is achieved. An expression for the drain current is derived from the potential model. The analytical results are compared with simulations, and excellent agreements are observed. The models accurately describe the characteristics of JLDG FETs, and they are very helpful for the design and optimization of devices.

บรรณานุกรม :
Ding, Zhihao , Hu, Guangxi , Liu, Ran , Wang, Lingli , Hu, Shuyan , Zhou, Xing . (2556). Analytical models for the electric potential, threshold voltage and drain current of long-channel junctionless double-gate transistors.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Ding, Zhihao , Hu, Guangxi , Liu, Ran , Wang, Lingli , Hu, Shuyan , Zhou, Xing . 2556. "Analytical models for the electric potential, threshold voltage and drain current of long-channel junctionless double-gate transistors".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Ding, Zhihao , Hu, Guangxi , Liu, Ran , Wang, Lingli , Hu, Shuyan , Zhou, Xing . "Analytical models for the electric potential, threshold voltage and drain current of long-channel junctionless double-gate transistors."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2556. Print.
Ding, Zhihao , Hu, Guangxi , Liu, Ran , Wang, Lingli , Hu, Shuyan , Zhou, Xing . Analytical models for the electric potential, threshold voltage and drain current of long-channel junctionless double-gate transistors. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2556.