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AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 V and a complementary metal–oxide–semiconductor compatible gold-free process

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 V and a complementary metal–oxide–semiconductor compatible gold-free process
นักวิจัย : Liu, Xinke , Zhan, Chunlei , Chan, Kwok Wai , Owen, Man Hon Samuel , Liu, Wei , Chi, Dong Zhi , Tan, Leng Seow , Chen, Kevin Jing , Yeo, Yee-Chia
คำค้น : DRNTU::Engineering::Electrical and electronic engineering.
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2556
อ้างอิง : Liu, X., Zhan, C., Chan, K. W., Owen, M. H. S., Liu, W., Chi, D. Z., et al. (2013). AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 V and a complementary metal–oxide–semiconductor compatible gold-free process. Japanese journal of applied physics, 52, 04CF06-. , http://hdl.handle.net/10220/17291 , http://dx.doi.org/10.7567/JJAP.52.04CF06
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Japanese journal of applied physics
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

This paper reports the fabrication and characterization of AlGaN/GaN-on-sapphire metal–oxide–semiconductor high-electron-mobility transistors (MOS-HEMTs) using a complementary metal–oxide–semiconductor (CMOS) compatible gold-free process. Devices with a gate-to-drain spacing LGD of 20 m achieved an off-state breakdown voltage VBR of 1400 V and an on-state resistance Ron of 22m cm2. This is the highest VBR achieved so far for gold-free AlGaN/GaN MOS-HEMTs. In addition, high on/off current ratio Ion=Ioff of 109 and low gate leakage current IG of 10 11 A/mm were also obtained.

บรรณานุกรม :
Liu, Xinke , Zhan, Chunlei , Chan, Kwok Wai , Owen, Man Hon Samuel , Liu, Wei , Chi, Dong Zhi , Tan, Leng Seow , Chen, Kevin Jing , Yeo, Yee-Chia . (2556). AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 V and a complementary metal–oxide–semiconductor compatible gold-free process.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Liu, Xinke , Zhan, Chunlei , Chan, Kwok Wai , Owen, Man Hon Samuel , Liu, Wei , Chi, Dong Zhi , Tan, Leng Seow , Chen, Kevin Jing , Yeo, Yee-Chia . 2556. "AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 V and a complementary metal–oxide–semiconductor compatible gold-free process".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Liu, Xinke , Zhan, Chunlei , Chan, Kwok Wai , Owen, Man Hon Samuel , Liu, Wei , Chi, Dong Zhi , Tan, Leng Seow , Chen, Kevin Jing , Yeo, Yee-Chia . "AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 V and a complementary metal–oxide–semiconductor compatible gold-free process."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2556. Print.
Liu, Xinke , Zhan, Chunlei , Chan, Kwok Wai , Owen, Man Hon Samuel , Liu, Wei , Chi, Dong Zhi , Tan, Leng Seow , Chen, Kevin Jing , Yeo, Yee-Chia . AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 V and a complementary metal–oxide–semiconductor compatible gold-free process. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2556.