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Effect of prebonding anneal on the microstructure evolution and Cu–Cu diffusion bonding quality for three-dimensional integration

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Effect of prebonding anneal on the microstructure evolution and Cu–Cu diffusion bonding quality for three-dimensional integration
นักวิจัย : Peng, L. , Lim, Dau Fatt , Zhang, L. , Li, H.Y. , Tan, Chuan Seng
คำค้น : DRNTU::Engineering::Electrical and electronic engineering.
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2555
อ้างอิง : Peng, L., Lim, D.F., Zhang, L., Li, H.Y., & Tan, C.S. (2012). Effect of prebonding anneal on the microstructure evolution and Cu–Cu diffusion bonding quality for three-dimensional integration. Journal of electronic materials, 41(9), 2567-2572. , http://hdl.handle.net/10220/17912 , http://dx.doi.org/10.1007/s11664-012-2153-z
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Journal of electronic materials
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

Electroplated copper (Cu) films are often annealed during back-end processes to stabilize grain growth in order to improve their electrical properties. The effect of prebonding anneal and hence the effective initial grain size of the Cu films on the final bond quality are studied using a 300-nm-thick Cu film that was deposited on a 200-mm silicon (Si) wafer and bonded at 300°C. As compared with the control wafer pair with a prebonding anneal at 300°C for 1 h in N2, the wafer pair without a prebonding anneal showed greater improvement in void density based on c-mode scanning acoustic microscopy (c-SAM). Dicing yield and shear strength were also enhanced when a prebonding anneal was not applied. This improvement is due to substantial grain growth of smaller Cu grains during the bonding process, which leads to a stronger Cu–Cu bond. Our work has identified a Cu–Cu bonding process with a lower total thermal budget, which is seen as a favorable option for future three-dimensional (3D) integrated circuit (IC) technology.

บรรณานุกรม :
Peng, L. , Lim, Dau Fatt , Zhang, L. , Li, H.Y. , Tan, Chuan Seng . (2555). Effect of prebonding anneal on the microstructure evolution and Cu–Cu diffusion bonding quality for three-dimensional integration.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Peng, L. , Lim, Dau Fatt , Zhang, L. , Li, H.Y. , Tan, Chuan Seng . 2555. "Effect of prebonding anneal on the microstructure evolution and Cu–Cu diffusion bonding quality for three-dimensional integration".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Peng, L. , Lim, Dau Fatt , Zhang, L. , Li, H.Y. , Tan, Chuan Seng . "Effect of prebonding anneal on the microstructure evolution and Cu–Cu diffusion bonding quality for three-dimensional integration."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2555. Print.
Peng, L. , Lim, Dau Fatt , Zhang, L. , Li, H.Y. , Tan, Chuan Seng . Effect of prebonding anneal on the microstructure evolution and Cu–Cu diffusion bonding quality for three-dimensional integration. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2555.