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Improvement of endurance degradation for oxide based resistive switching memory devices correlated with oxygen vacancy accumulation effect

หน่วยงาน Nanyang Technological University, Singapore

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ชื่อเรื่อง : Improvement of endurance degradation for oxide based resistive switching memory devices correlated with oxygen vacancy accumulation effect
นักวิจัย : Lu, Y. , Chen, B. , Gao, Bin , Fang, Z. , Fu, Y. H. , Yang, J. Q. , Liu, L. F. , Liu, X. Y. , Yu, Hongyu , Kang, J. F.
คำค้น : DRNTU::Engineering::Electrical and electronic engineering.
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2555
อ้างอิง : Lu, Y., Chen, B., Gao, B., Fang, Z., Fu, Y. H., Yang, J. Q., Liu, L. F., Liu, X. Y., Yu, H., & Kang, J. F. (2012). Improvement of endurance degradation for oxide based resistive switching memory devices correlated with oxygen vacancy accumulation effect. 2012 IEEE International Reliability Physics Symposium (IRPS), pp.MY.4.1-MY.4.4. , http://hdl.handle.net/10220/16380 , http://dx.doi.org/10.1109/IRPS.2012.6241921
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : -
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

We report that the endurance degradation behaviors of transitional metal oxide (TMO) based resistive random access memory (RRAM) is dominated by three different steps and correlated with extra oxygen vacancy accumulation during SET/RESET switching process. The physical origin of endurance degradation due to the pulse voltage effect is verified by the measured data. The optimized operation schemes are accordingly proposed and implemented to enhance the endurance behavior. More than 108 switching cycles are achieved in the TiN/HfOx/TiOx structured devices.

บรรณานุกรม :
Lu, Y. , Chen, B. , Gao, Bin , Fang, Z. , Fu, Y. H. , Yang, J. Q. , Liu, L. F. , Liu, X. Y. , Yu, Hongyu , Kang, J. F. . (2555). Improvement of endurance degradation for oxide based resistive switching memory devices correlated with oxygen vacancy accumulation effect.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Lu, Y. , Chen, B. , Gao, Bin , Fang, Z. , Fu, Y. H. , Yang, J. Q. , Liu, L. F. , Liu, X. Y. , Yu, Hongyu , Kang, J. F. . 2555. "Improvement of endurance degradation for oxide based resistive switching memory devices correlated with oxygen vacancy accumulation effect".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Lu, Y. , Chen, B. , Gao, Bin , Fang, Z. , Fu, Y. H. , Yang, J. Q. , Liu, L. F. , Liu, X. Y. , Yu, Hongyu , Kang, J. F. . "Improvement of endurance degradation for oxide based resistive switching memory devices correlated with oxygen vacancy accumulation effect."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2555. Print.
Lu, Y. , Chen, B. , Gao, Bin , Fang, Z. , Fu, Y. H. , Yang, J. Q. , Liu, L. F. , Liu, X. Y. , Yu, Hongyu , Kang, J. F. . Improvement of endurance degradation for oxide based resistive switching memory devices correlated with oxygen vacancy accumulation effect. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2555.