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NBTI/PBTI-aware wordline voltage control with no boosted supply for stability improvement of half-selected SRAM cells

หน่วยงาน Nanyang Technological University, Singapore

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ชื่อเรื่อง : NBTI/PBTI-aware wordline voltage control with no boosted supply for stability improvement of half-selected SRAM cells
นักวิจัย : Lee, Zhao Chuan , Ho, Kim Ming , Kong, Zhi Hui , Kim, Tony Tae-Hyoung
คำค้น : DRNTU::Engineering::Electrical and electronic engineering.
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2555
อ้างอิง : Lee, Z. C., Ho, K. M., Kong, Z. H., & Kim, T. T. (2012). NBTI/PBTI-aware wordline voltage control with no boosted supply for stability improvement of half-selected SRAM cells. 2012 International SoC Design Conference (ISOCC 2012). , http://hdl.handle.net/10220/13598 , http://dx.doi.org/10.1109/ISOCC.2012.6407074
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : -
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

Negative Bias Temperature Instability (NBTI) and Positive Bias Temperature Instability (PBTI) are the two important reliability issues that degrade the SRAM cell stability over time. In this paper, we analyze the impact of NBTI and PBTI on 8T SRAM cells, and propose a stability improvement technique without using boosted supply voltage. In decoupled SRAM cells, the cell stability is limited by the stability of the half-selected cells, whose stability is significantly affected by NBTI and PBTI. The proposed technique lowers the WWL voltage to reduce the amount of disturbance and compensate the degraded cell stability. Lowering the WWL voltage doesn't affect the write margin substantially since the write margin is improved with NBTI and PBTI and the lowered WWL will produce a write margin similar to the original one.

บรรณานุกรม :
Lee, Zhao Chuan , Ho, Kim Ming , Kong, Zhi Hui , Kim, Tony Tae-Hyoung . (2555). NBTI/PBTI-aware wordline voltage control with no boosted supply for stability improvement of half-selected SRAM cells.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Lee, Zhao Chuan , Ho, Kim Ming , Kong, Zhi Hui , Kim, Tony Tae-Hyoung . 2555. "NBTI/PBTI-aware wordline voltage control with no boosted supply for stability improvement of half-selected SRAM cells".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Lee, Zhao Chuan , Ho, Kim Ming , Kong, Zhi Hui , Kim, Tony Tae-Hyoung . "NBTI/PBTI-aware wordline voltage control with no boosted supply for stability improvement of half-selected SRAM cells."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2555. Print.
Lee, Zhao Chuan , Ho, Kim Ming , Kong, Zhi Hui , Kim, Tony Tae-Hyoung . NBTI/PBTI-aware wordline voltage control with no boosted supply for stability improvement of half-selected SRAM cells. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2555.