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Flexible write-once–read-many-times memory device based on a nickel oxide thin film

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Flexible write-once–read-many-times memory device based on a nickel oxide thin film
นักวิจัย : Yu, Q. , Liu, Y. , Chen, Tupei , Liu, Z. , Yu, Y. F. , Lei, H. W. , Zhu, J. , Fung, Stevenson Hon Yuen
คำค้น : DRNTU::Engineering::Electrical and electronic engineering
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2555
อ้างอิง : Yu, Q., Liu, Y., Chen, T., Liu, Z., Yu, Y. F., Lei, H. W., et al. (2012). Flexible write-once–read-many-times memory device based on a nickel oxide thin film. IEEE transactions on electron devices, 59(3), 858-862. , 0018-9383 , http://hdl.handle.net/10220/13467 , http://dx.doi.org/10.1109/TED.2011.2179939
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : IEEE transactions on electron devices
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

A write-once-read-many-times (WORM) memory device based on conduction switching of a NiO thin film in a metal-insulator-metal structure is fabricated on a flexible substrate. The device can be switched from a low-conductance state (unprogrammed state) to a high-conductance state (programmed state) with the formation of conductive filament(s) in the NiO layer. The two memory states can be easily distinguished at a very low reading voltage. For example, at the reading voltage of 0.1 V, the current ratio of the state programmed at 3 V for 1 μs to the unprogrammed state is larger than 104. The WORM device exhibits good reading-endurance and data-retention characteristics. The flexible device is promising for low-cost and low-power archival storage applications.

บรรณานุกรม :
Yu, Q. , Liu, Y. , Chen, Tupei , Liu, Z. , Yu, Y. F. , Lei, H. W. , Zhu, J. , Fung, Stevenson Hon Yuen . (2555). Flexible write-once–read-many-times memory device based on a nickel oxide thin film.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Yu, Q. , Liu, Y. , Chen, Tupei , Liu, Z. , Yu, Y. F. , Lei, H. W. , Zhu, J. , Fung, Stevenson Hon Yuen . 2555. "Flexible write-once–read-many-times memory device based on a nickel oxide thin film".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Yu, Q. , Liu, Y. , Chen, Tupei , Liu, Z. , Yu, Y. F. , Lei, H. W. , Zhu, J. , Fung, Stevenson Hon Yuen . "Flexible write-once–read-many-times memory device based on a nickel oxide thin film."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2555. Print.
Yu, Q. , Liu, Y. , Chen, Tupei , Liu, Z. , Yu, Y. F. , Lei, H. W. , Zhu, J. , Fung, Stevenson Hon Yuen . Flexible write-once–read-many-times memory device based on a nickel oxide thin film. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2555.