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Effect of heat diffusion during state transitions in resistive switching memory device based on nickel-rich nickel oxide film

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Effect of heat diffusion during state transitions in resistive switching memory device based on nickel-rich nickel oxide film
นักวิจัย : Hu, S. G. , Liu, Yang , Chen, Tupei , Liu, Zhen , Yang, Ming , Yu, Qi , Fung, Stevenson Hon Yuen
คำค้น : DRNTU::Engineering::Electrical and electronic engineering.
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2555
อ้างอิง : 0018-9383 , http://hdl.handle.net/10220/13453 , http://dx.doi.org/10.1109/TED.2012.2186300
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : IEEE transactions on electron devices
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

The switching behaviors of the resistive switching device based on Ni-rich nickel oxide thin film during the set and reset processes in the pulse voltage experiment have been examined. In the switching from a high-resistance state (HRS) to a low-resistance state (LRS) during the set process, the formation of filament is the dominant process. The switching is easier to occur with a shorter off time between pulses, indicating that heat diffusion plays an important role. On the other hand, in the switching from the LRS to the HRS during the reset process, there is a competition between the formation and deformation of filament, which is much stronger than that in the set process. The heat diffusion during the off time between pulses affects both the formation and deformation of filaments. Thus, there is no definite relationship in statistics between the off time and the occurrence of the reset switching.

บรรณานุกรม :
Hu, S. G. , Liu, Yang , Chen, Tupei , Liu, Zhen , Yang, Ming , Yu, Qi , Fung, Stevenson Hon Yuen . (2555). Effect of heat diffusion during state transitions in resistive switching memory device based on nickel-rich nickel oxide film.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Hu, S. G. , Liu, Yang , Chen, Tupei , Liu, Zhen , Yang, Ming , Yu, Qi , Fung, Stevenson Hon Yuen . 2555. "Effect of heat diffusion during state transitions in resistive switching memory device based on nickel-rich nickel oxide film".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Hu, S. G. , Liu, Yang , Chen, Tupei , Liu, Zhen , Yang, Ming , Yu, Qi , Fung, Stevenson Hon Yuen . "Effect of heat diffusion during state transitions in resistive switching memory device based on nickel-rich nickel oxide film."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2555. Print.
Hu, S. G. , Liu, Yang , Chen, Tupei , Liu, Zhen , Yang, Ming , Yu, Qi , Fung, Stevenson Hon Yuen . Effect of heat diffusion during state transitions in resistive switching memory device based on nickel-rich nickel oxide film. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2555.