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Effects of point defect healing on phosphorus implanted germanium n+/p junction and its thermal stability

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Effects of point defect healing on phosphorus implanted germanium n+/p junction and its thermal stability
นักวิจัย : Shim, Jaewoo , Shin, Jeong-hun , Lee, In-Yeal , Choi, Daebeom , Baek, Jung Woo , Heo, Jonggon , Park, Wonkyu , Leem, Jung Woo , Yu, Jae Su , Jung, Woo-Shik , Saraswat, Krishna , Park, Jin-Hong
คำค้น : -
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2556
อ้างอิง : Shim, J., Shin, J., Lee, I.-Y., Choi, D., Baek, J. W., Heo, J., Park, W., Leem, J. W., Yu, J. S., Jung, W.-S., Saraswat, K.,& Park, J.-H. (2013). Effects of point defect healing on phosphorus implanted germanium n+/p junction and its thermal stability. Journal of Applied Physics, 114(9), 094515. , 0021-8979 , http://hdl.handle.net/10220/13441 , http://dx.doi.org/10.1063/1.4820580 , 174612
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Journal of applied physics
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

In this work, the effect of Ge point defect healing process between 550 °C and 650 °C is investigated, in the aspect of leakage (off) current and junction depth of Ge n+/p junction diodes using ECV, TEM, J-V, and SIMS analyses. After 600 °C anneal, off-current density (2 × 10−4 A/cm2) is dramatically reduced due to the defect healing phenomenon that decreases the number of point defects, subsequently providing a higher on/off-current ratio of 5 × 103. In spite of the high healing temperature, junction diodes seem not to suffer from the deep diffusion of phosphorus (P) in Ge because those diffuse mostly through VGe. In addition, it is also confirmed that Ti is an appropriate material in terms of diffusion barrier and diffusivity for Ge n+/p junction contact metal.

บรรณานุกรม :
Shim, Jaewoo , Shin, Jeong-hun , Lee, In-Yeal , Choi, Daebeom , Baek, Jung Woo , Heo, Jonggon , Park, Wonkyu , Leem, Jung Woo , Yu, Jae Su , Jung, Woo-Shik , Saraswat, Krishna , Park, Jin-Hong . (2556). Effects of point defect healing on phosphorus implanted germanium n+/p junction and its thermal stability.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Shim, Jaewoo , Shin, Jeong-hun , Lee, In-Yeal , Choi, Daebeom , Baek, Jung Woo , Heo, Jonggon , Park, Wonkyu , Leem, Jung Woo , Yu, Jae Su , Jung, Woo-Shik , Saraswat, Krishna , Park, Jin-Hong . 2556. "Effects of point defect healing on phosphorus implanted germanium n+/p junction and its thermal stability".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Shim, Jaewoo , Shin, Jeong-hun , Lee, In-Yeal , Choi, Daebeom , Baek, Jung Woo , Heo, Jonggon , Park, Wonkyu , Leem, Jung Woo , Yu, Jae Su , Jung, Woo-Shik , Saraswat, Krishna , Park, Jin-Hong . "Effects of point defect healing on phosphorus implanted germanium n+/p junction and its thermal stability."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2556. Print.
Shim, Jaewoo , Shin, Jeong-hun , Lee, In-Yeal , Choi, Daebeom , Baek, Jung Woo , Heo, Jonggon , Park, Wonkyu , Leem, Jung Woo , Yu, Jae Su , Jung, Woo-Shik , Saraswat, Krishna , Park, Jin-Hong . Effects of point defect healing on phosphorus implanted germanium n+/p junction and its thermal stability. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2556.