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GaN-on-Silicon integration technology

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : GaN-on-Silicon integration technology
นักวิจัย : Ng, Geok Ing , Arulkumaran, Subramaniam , Vicknesh, Sahmuganathan , Wang, H. , Ang, K. S. , Kumar, C. M. Manoj , Ranjan, K. , Lo, Guo-Qiang , Tripathy, Sudhiranjan , Boon, Chirn Chye , Lim, Wei Meng
คำค้น : -
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2555
อ้างอิง : http://hdl.handle.net/10220/12826 , http://dx.doi.org/10.1109/RFIT.2012.6401646
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : -
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

This work presents our recent progress on addressing two major challenges to realizing GaN-Silicon integration namely epitaxial growth of GaN-on-Silicon and CMOS-compatible process. We have successfully demonstrated 0.3-μm gate-length GaN HEMTs on 8-inch Si(111) substrate with fT of 28GHz and fmax of of 64GHz. These device performances are comparable to our reported devices fabricated on 4-inch Si substrate. We have also developed a GaN HEMT process with CMOS-compatible non-gold metal scheme. Excellent ohmic contacts (Rc=0.24 Ω-mm) with smooth surface morphology have been achieved which are comparable to those using conventional III-V gold-based ohmic contacts. 0.15-μm gate-length GaN HEMTs fabricated with this process achieved fT and fmax of 51 GHz and 50GHz respectively. The 5nm-thick AlGaN barrier HEMT exhibited three terminal OFF-state breakdown voltage (BVgd) of 83 V. Our results demonstrate the feasibility of realizing CMOS-compatible high performance GaN HEMTs on 8-inch silicon substrates for future GaN-on-Si integration.

บรรณานุกรม :
Ng, Geok Ing , Arulkumaran, Subramaniam , Vicknesh, Sahmuganathan , Wang, H. , Ang, K. S. , Kumar, C. M. Manoj , Ranjan, K. , Lo, Guo-Qiang , Tripathy, Sudhiranjan , Boon, Chirn Chye , Lim, Wei Meng . (2555). GaN-on-Silicon integration technology.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Ng, Geok Ing , Arulkumaran, Subramaniam , Vicknesh, Sahmuganathan , Wang, H. , Ang, K. S. , Kumar, C. M. Manoj , Ranjan, K. , Lo, Guo-Qiang , Tripathy, Sudhiranjan , Boon, Chirn Chye , Lim, Wei Meng . 2555. "GaN-on-Silicon integration technology".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Ng, Geok Ing , Arulkumaran, Subramaniam , Vicknesh, Sahmuganathan , Wang, H. , Ang, K. S. , Kumar, C. M. Manoj , Ranjan, K. , Lo, Guo-Qiang , Tripathy, Sudhiranjan , Boon, Chirn Chye , Lim, Wei Meng . "GaN-on-Silicon integration technology."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2555. Print.
Ng, Geok Ing , Arulkumaran, Subramaniam , Vicknesh, Sahmuganathan , Wang, H. , Ang, K. S. , Kumar, C. M. Manoj , Ranjan, K. , Lo, Guo-Qiang , Tripathy, Sudhiranjan , Boon, Chirn Chye , Lim, Wei Meng . GaN-on-Silicon integration technology. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2555.