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N-channel InGaAs field-effect transistors formed on germanium-on-insulator substrates

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : N-channel InGaAs field-effect transistors formed on germanium-on-insulator substrates
นักวิจัย : Ivana , Subramanian, Sujith , Owen, Man Hon Samuel , Tan, Kian Hua , Loke, Wan Khai , Wicaksono, Satrio , Yoon, Soon Fatt , Yeo, Yee-Chia
คำค้น : DRNTU::Engineering::Electrical and electronic engineering.
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2555
อ้างอิง : Ivana, Subramanian, S., Owen, M. H. S., Tan, K. H., Loke, W. K., Wicaksono, S., Yoon, S. F., & Yeo, Y. C. (2012). N-Channel InGaAs Field-Effect Transistors formed on Germanium-on-Insulator Substrates. Applied Physics Express, 5(11). , http://hdl.handle.net/10220/12545 , http://dx.doi.org/10.1143/APEX.5.116502
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Applied physics express
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

InGaAs n-channel metal oxide semiconductor field-effect transistors (MOSFETs) were fabricated on germanium-on-insulator (GeOI) substrate for the first time. Integration of InGaAs on a GeOI substrate was achieved using a molecular beam epitaxy (MBE)-grown InAlAs graded buffer. The fabricated MOSFET, with a self-aligned Ni–InGaAs metallic source/drain, achieves good device characteristics. The normalized transconductance (Gm·tox) compares very well with reported data for InGaAs n-MOSFETs formed on bulk InP substrates, and is significantly higher than reported data for In0.53Ga0.47As n-MOSFETs fabricated on Si substrates using a similar growth technique.

บรรณานุกรม :
Ivana , Subramanian, Sujith , Owen, Man Hon Samuel , Tan, Kian Hua , Loke, Wan Khai , Wicaksono, Satrio , Yoon, Soon Fatt , Yeo, Yee-Chia . (2555). N-channel InGaAs field-effect transistors formed on germanium-on-insulator substrates.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Ivana , Subramanian, Sujith , Owen, Man Hon Samuel , Tan, Kian Hua , Loke, Wan Khai , Wicaksono, Satrio , Yoon, Soon Fatt , Yeo, Yee-Chia . 2555. "N-channel InGaAs field-effect transistors formed on germanium-on-insulator substrates".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Ivana , Subramanian, Sujith , Owen, Man Hon Samuel , Tan, Kian Hua , Loke, Wan Khai , Wicaksono, Satrio , Yoon, Soon Fatt , Yeo, Yee-Chia . "N-channel InGaAs field-effect transistors formed on germanium-on-insulator substrates."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2555. Print.
Ivana , Subramanian, Sujith , Owen, Man Hon Samuel , Tan, Kian Hua , Loke, Wan Khai , Wicaksono, Satrio , Yoon, Soon Fatt , Yeo, Yee-Chia . N-channel InGaAs field-effect transistors formed on germanium-on-insulator substrates. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2555.