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AlGaN/GaN-on-silicon metal–oxide–semiconductor high-electron-mobility transistor with breakdown voltage of 800 V and on-state resistance of 3 mΩ·cm2 using a complementary metal–oxide–semiconductor compatible gold-free process

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : AlGaN/GaN-on-silicon metal–oxide–semiconductor high-electron-mobility transistor with breakdown voltage of 800 V and on-state resistance of 3 mΩ·cm2 using a complementary metal–oxide–semiconductor compatible gold-free process
นักวิจัย : Liu, Xinke , Zhan, Chunlei , Chan, Kwok Wai , Liu, Wei , Tan, Leng Seow , Chen, Kevin Jing , Yeo, Yee-Chia
คำค้น : DRNTU::Engineering::Electrical and electronic engineering.
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2555
อ้างอิง : Liu, X., Zhan, C., Chan, K. W., Liu, W., Tan, L. S., Chen, K. J.,& Yeo, Y. C. (2012). AlGaN/GaN-on-Silicon Metal–Oxide–Semiconductor High-Electron-Mobility Transistor with Breakdown Voltage of 800 V and On-State Resistance of 3 mΩ·cm2 Using a Complementary Metal–Oxide–Semiconductor Compatible Gold-Free Process. Applied Physics Express, 5(6). , http://hdl.handle.net/10220/12574 , http://dx.doi.org/10.1143/APEX.5.066501
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Applied physics express
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

This letter reports the fabrication and characterization of undoped AlGaN/GaN-on-silicon metal–oxide–semiconductor high-electron-mobility transistors (MOS-HEMTs) using a complementary metal–oxide–semiconductor (CMOS) compatible gold-free process. Devices with a gate-to-drain LGD spacing of 5 µm achieved an off-state breakdown voltage VBR of 800 V and an on-state resistance Ron of 3 mΩ·cm2. In addition, subthreshold swing S of ∼97 mV/decade and Ion/Ioff ratio of ∼106 were obtained. Compared with those of gold-free GaN MOS-HEMTs having a gate-to-drain spacing LGD of less than 10 µm, the VBR achieved in this work is the highest.

บรรณานุกรม :
Liu, Xinke , Zhan, Chunlei , Chan, Kwok Wai , Liu, Wei , Tan, Leng Seow , Chen, Kevin Jing , Yeo, Yee-Chia . (2555). AlGaN/GaN-on-silicon metal–oxide–semiconductor high-electron-mobility transistor with breakdown voltage of 800 V and on-state resistance of 3 mΩ·cm2 using a complementary metal–oxide–semiconductor compatible gold-free process.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Liu, Xinke , Zhan, Chunlei , Chan, Kwok Wai , Liu, Wei , Tan, Leng Seow , Chen, Kevin Jing , Yeo, Yee-Chia . 2555. "AlGaN/GaN-on-silicon metal–oxide–semiconductor high-electron-mobility transistor with breakdown voltage of 800 V and on-state resistance of 3 mΩ·cm2 using a complementary metal–oxide–semiconductor compatible gold-free process".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Liu, Xinke , Zhan, Chunlei , Chan, Kwok Wai , Liu, Wei , Tan, Leng Seow , Chen, Kevin Jing , Yeo, Yee-Chia . "AlGaN/GaN-on-silicon metal–oxide–semiconductor high-electron-mobility transistor with breakdown voltage of 800 V and on-state resistance of 3 mΩ·cm2 using a complementary metal–oxide–semiconductor compatible gold-free process."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2555. Print.
Liu, Xinke , Zhan, Chunlei , Chan, Kwok Wai , Liu, Wei , Tan, Leng Seow , Chen, Kevin Jing , Yeo, Yee-Chia . AlGaN/GaN-on-silicon metal–oxide–semiconductor high-electron-mobility transistor with breakdown voltage of 800 V and on-state resistance of 3 mΩ·cm2 using a complementary metal–oxide–semiconductor compatible gold-free process. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2555.