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Realization of transient memory-loss with NiO-based resistive switching device

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Realization of transient memory-loss with NiO-based resistive switching device
นักวิจัย : Hu, S. G. , Liu, Y. , Chen, Tupei , Liu, Z. , Yu, Q. , Deng, L. J. , Yin, Y. , Hosaka, Sumio
คำค้น : DRNTU::Engineering::Electrical and electronic engineering
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2555
อ้างอิง : Hu, S. G., Liu, Y., Chen, T., Liu, Z., Yu, Q., Deng, L. J., Yin, Y.,& Hosaka, S. (2012). Realization of transient memory-loss with NiO-based resistive switching device. Applied physics A, 109(2), 349-352. , http://hdl.handle.net/10220/12539 , http://dx.doi.org/10.1007/s00339-012-7179-9
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Applied physics A
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

A resistive switching device based on a nickel-rich nickel oxide thin film, which exhibits inherent learning and memory-loss abilities, is reported in this work. The conductance of the device gradually increases and finally saturates with the number of voltage pulses (or voltage sweepings), which is analogous to the behavior of the short-term and long-term memory in the human brain. Furthermore, the number of the voltage pulses (or sweeping cycles) required to achieve a given conductance state increases with the interval between two consecutive voltage pulses (or sweeping cycles), which is attributed to the heat diffusion in the material of the conductive filaments formed in the nickel oxide thin film. The phenomenon resembles the behavior of the human brain, i.e., forgetting starts immediately after an impression, a larger interval of the impressions leads to more memory loss, thus the memorization needs more impressions to enhance.

บรรณานุกรม :
Hu, S. G. , Liu, Y. , Chen, Tupei , Liu, Z. , Yu, Q. , Deng, L. J. , Yin, Y. , Hosaka, Sumio . (2555). Realization of transient memory-loss with NiO-based resistive switching device.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Hu, S. G. , Liu, Y. , Chen, Tupei , Liu, Z. , Yu, Q. , Deng, L. J. , Yin, Y. , Hosaka, Sumio . 2555. "Realization of transient memory-loss with NiO-based resistive switching device".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Hu, S. G. , Liu, Y. , Chen, Tupei , Liu, Z. , Yu, Q. , Deng, L. J. , Yin, Y. , Hosaka, Sumio . "Realization of transient memory-loss with NiO-based resistive switching device."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2555. Print.
Hu, S. G. , Liu, Y. , Chen, Tupei , Liu, Z. , Yu, Q. , Deng, L. J. , Yin, Y. , Hosaka, Sumio . Realization of transient memory-loss with NiO-based resistive switching device. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2555.