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Oxide-based RRAM : a novel defect-engineering-based implementation for multilevel data storage

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Oxide-based RRAM : a novel defect-engineering-based implementation for multilevel data storage
นักวิจัย : Kang, J. F. , Gao, Bin , Chen, B. , Liu, L. F. , Liu, X. Y. , Yu, Hongyu , Wang, Z. R. , Yu, B.
คำค้น : DRNTU::Engineering::Electrical and electronic engineering.
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2555
อ้างอิง : Kang, J. F., Gao, B., Chen, B., Liu, L. F., Liu, X. Y., Yu, H., et al. (2012). Oxide-Based RRAM: A Novel Defect-Engineering-Based Implementation for Multilevel Data Storage. 2012 4th IEEE International Memory Workshop. , http://hdl.handle.net/10220/11838 , http://dx.doi.org/10.1109/IMW.2012.6213664
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : -
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

A novel strategy based on defect engineering is proposed for high-performance multilevel data storage in oxide-based resistive random access memory (RRAM). Key innovations are (i) material-oriented cell engineering for desired modification of physical locations of generated oxygen vacancies in resistive switching layer and (ii) innovative operation scheme to control the distribution of oxygen vacancy conducting filaments during the switching. Excellent memory performance with four-level data storage is successfully demonstrated in hafnium-oxide-based RRAM devices, indicating the viability of the proposed engineering design strategy.

บรรณานุกรม :
Kang, J. F. , Gao, Bin , Chen, B. , Liu, L. F. , Liu, X. Y. , Yu, Hongyu , Wang, Z. R. , Yu, B. . (2555). Oxide-based RRAM : a novel defect-engineering-based implementation for multilevel data storage.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Kang, J. F. , Gao, Bin , Chen, B. , Liu, L. F. , Liu, X. Y. , Yu, Hongyu , Wang, Z. R. , Yu, B. . 2555. "Oxide-based RRAM : a novel defect-engineering-based implementation for multilevel data storage".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Kang, J. F. , Gao, Bin , Chen, B. , Liu, L. F. , Liu, X. Y. , Yu, Hongyu , Wang, Z. R. , Yu, B. . "Oxide-based RRAM : a novel defect-engineering-based implementation for multilevel data storage."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2555. Print.
Kang, J. F. , Gao, Bin , Chen, B. , Liu, L. F. , Liu, X. Y. , Yu, Hongyu , Wang, Z. R. , Yu, B. . Oxide-based RRAM : a novel defect-engineering-based implementation for multilevel data storage. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2555.