ridm@nrct.go.th   ระบบคลังข้อมูลงานวิจัยไทย   รายการโปรดที่คุณเลือกไว้

Vertical silicon nanowire diode with nickel silicide induced dopant segregation

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Vertical silicon nanowire diode with nickel silicide induced dopant segregation
นักวิจัย : Lu, Weijie , Pey, Kin Leong , Wang, Xinpeng , Li, Xiang , Chen, Zhixian , Navab, Singh , Leong, Kam Chew , Gan, Chee Lip , Tan, Chuan Seng
คำค้น : -
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2555
อ้างอิง : Lu, W., Pey, K. L., Wang, X., Li, X., Chen, Z., Navab, S., et al. (2012). Vertical Silicon Nanowire Diode with Nickel Silicide Induced Dopant Segregation. Japanese Journal of Applied Physics, 51. , 0021-4922 , http://hdl.handle.net/10220/11667 , http://dx.doi.org/10.1143/JJAP.51.11PE08
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Japanese journal of applied physics
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

Dopant segregated Schottky barrier (DSSB) and Schottky barrier (SB) vertical silicon nanowire (VSiNW) diodes were fabricated using industry complemetary metal oxide semiconductor field effect transistor (CMOS) processes to investigate the effects of segregated dopants at the silicide/silicon interface and different annealing steps on nickel silicide formation in the DSSB VSiNW diodes. With segregated dopants at the silicide/silicon interface, VSiNW diodes showed higher on-current, due to an enhanced carrier tunneling, and much lower off-current. This can be attributed to the altered energy bands caused by the accumulated Arsenic dopants at the interface. Moreover, DSSB VSiNW diodes also presented ideality factor much closer to unity and exhibited lower electron Schottky barrier height (ΦBn) than SB VSiNW diodes. This proved that interfacial accumulated dopants could impede the inhomogeneous nature of the Schottky diodes and simultaneously, minimize the effect of Fermi level pinning and ionization of surface defect states. Comparing the impact of different silicide formation annealing sequence using DSSB VSiNW diodes, the 2-step anneal process reduces the silicide intrusion length within the SiNW by ∼5× and the silicide interface was smooth along the (100) direction. Furthermore, the 2-step DSSB VSiNW diode also exhibited much lower leakage current and an ideality factor much closer to unity, as compared to the 1-step DSSB VSiNW diode.

บรรณานุกรม :
Lu, Weijie , Pey, Kin Leong , Wang, Xinpeng , Li, Xiang , Chen, Zhixian , Navab, Singh , Leong, Kam Chew , Gan, Chee Lip , Tan, Chuan Seng . (2555). Vertical silicon nanowire diode with nickel silicide induced dopant segregation.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Lu, Weijie , Pey, Kin Leong , Wang, Xinpeng , Li, Xiang , Chen, Zhixian , Navab, Singh , Leong, Kam Chew , Gan, Chee Lip , Tan, Chuan Seng . 2555. "Vertical silicon nanowire diode with nickel silicide induced dopant segregation".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Lu, Weijie , Pey, Kin Leong , Wang, Xinpeng , Li, Xiang , Chen, Zhixian , Navab, Singh , Leong, Kam Chew , Gan, Chee Lip , Tan, Chuan Seng . "Vertical silicon nanowire diode with nickel silicide induced dopant segregation."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2555. Print.
Lu, Weijie , Pey, Kin Leong , Wang, Xinpeng , Li, Xiang , Chen, Zhixian , Navab, Singh , Leong, Kam Chew , Gan, Chee Lip , Tan, Chuan Seng . Vertical silicon nanowire diode with nickel silicide induced dopant segregation. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2555.