ridm@nrct.go.th   ระบบคลังข้อมูลงานวิจัยไทย   รายการโปรดที่คุณเลือกไว้

Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si(111) substrate

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si(111) substrate
นักวิจัย : Arulkumaran, Subramaniam , Ng, Geok Ing , Vicknesh, Sahmuganathan , Wang, Hong , Ang, Kian Siong , Tan, Joyce Pei Ying , Lin, Vivian Kaixin , Todd, Shane , Lo, Guo-Qiang , Tripathy, Sudhiranjan
คำค้น : DRNTU::Engineering::Electrical and electronic engineering.
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2555
อ้างอิง : Arulkumaran, S., Ng, G. I., Vicknesh, S., Wang, H., Ang, K. S., Tan, J. P. Y., et al. (2012). Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate. Japanese Journal of Applied Physics, 51. , 0021-4922 , http://hdl.handle.net/10220/11617 , http://dx.doi.org/10.1143/JJAP.51.111001
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Japanese journal of applied physics
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

We report for the first time the DC and microwave characteristics of sub-micron gate (∼0.3 µm) AlGaN/GaN high-electron-mobility transistors (HEMTs) on 8-in. diameter Si(111) substrate. The fabricated sub-micron gate devices on crack-free AlGaN/GaN HEMT structures exhibited good pin.-off characteristics with a maximum drain current density of 853 mA/mm and a maximum extrinsic transconductance of 180 mS/mm. The device exhibited unit current-gain cut-off frequency of 28 GHz, maximum oscillation frequency of 64 GHz and OFF-state breakdown voltage of 60 V. This work demonstrates the feasibility of achieving good performance AlGaN/GaN HEMTs on 8-in. diameter Si(111) for low-cost high-frequency and high-power switching applications.

บรรณานุกรม :
Arulkumaran, Subramaniam , Ng, Geok Ing , Vicknesh, Sahmuganathan , Wang, Hong , Ang, Kian Siong , Tan, Joyce Pei Ying , Lin, Vivian Kaixin , Todd, Shane , Lo, Guo-Qiang , Tripathy, Sudhiranjan . (2555). Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si(111) substrate.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Arulkumaran, Subramaniam , Ng, Geok Ing , Vicknesh, Sahmuganathan , Wang, Hong , Ang, Kian Siong , Tan, Joyce Pei Ying , Lin, Vivian Kaixin , Todd, Shane , Lo, Guo-Qiang , Tripathy, Sudhiranjan . 2555. "Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si(111) substrate".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Arulkumaran, Subramaniam , Ng, Geok Ing , Vicknesh, Sahmuganathan , Wang, Hong , Ang, Kian Siong , Tan, Joyce Pei Ying , Lin, Vivian Kaixin , Todd, Shane , Lo, Guo-Qiang , Tripathy, Sudhiranjan . "Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si(111) substrate."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2555. Print.
Arulkumaran, Subramaniam , Ng, Geok Ing , Vicknesh, Sahmuganathan , Wang, Hong , Ang, Kian Siong , Tan, Joyce Pei Ying , Lin, Vivian Kaixin , Todd, Shane , Lo, Guo-Qiang , Tripathy, Sudhiranjan . Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si(111) substrate. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2555.