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Strong green emission in ZnO films after H2 surface treatment

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Strong green emission in ZnO films after H2 surface treatment
นักวิจัย : Li, T. , Herng, T. S. , Liang, H. K. , Bao, N. N. , Chen, Tupei , Wong, J. I. , Xue, J. M. , Ding, Jun
คำค้น : DRNTU::Engineering::Electrical and electronic engineering
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2555
อ้างอิง : Li, T., Herng, T. S., Liang, H. K., Bao, N. N., Chen, T., Wong, J. I., et al. (2012). Strong green emission in ZnO films after H 2 surface treatment. Journal of physics D : applied physics, 45(18). , http://hdl.handle.net/10220/11405 , http://dx.doi.org/10.1088/0022-3727/45/18/185102
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Journal of physics D : applied physics
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

Using a two-step fabrication technique (pulsed laser deposition (PLD) and H2 surface treatment), we fabricated ZnO thin films that could emit ultra-strong green emission with coexistence of random lasing phenomenon. After PLD deposition, the as-prepared undoped ZnO thin films (200–500 nm) were annealed in Ar 95%–H25% ambient at 500 °C. The H2 treatment led to the formation of a porous structure that creates substantial optical cavities (diameter ~1.3 µm). Surprisingly, these optical cavities tremendously amplified the green emission rather than ultraviolet (UV) emission. There was insignificant change in emission intensity after high-temperature annealing (700 °C) in O2 and acetone dipping, indicating the samples are thermally and chemically stable. The samples exhibited a high quantum yield of 32%. We studied the origin of this ultra-strong green emission using low-temperature photoluminescence, extensive structural study and cyclic annealing. The results suggested that neither hydrogen nor VO plays a role in green emission. The green emission was attributed mainly to the complex defects and the presence of structural defects in the porous structure. In addition, we demonstrated the feasibility of large-scale green emission ZnO fabrication via micro-size patterning, paving a way to practical optoelectronic applications.

บรรณานุกรม :
Li, T. , Herng, T. S. , Liang, H. K. , Bao, N. N. , Chen, Tupei , Wong, J. I. , Xue, J. M. , Ding, Jun . (2555). Strong green emission in ZnO films after H2 surface treatment.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Li, T. , Herng, T. S. , Liang, H. K. , Bao, N. N. , Chen, Tupei , Wong, J. I. , Xue, J. M. , Ding, Jun . 2555. "Strong green emission in ZnO films after H2 surface treatment".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Li, T. , Herng, T. S. , Liang, H. K. , Bao, N. N. , Chen, Tupei , Wong, J. I. , Xue, J. M. , Ding, Jun . "Strong green emission in ZnO films after H2 surface treatment."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2555. Print.
Li, T. , Herng, T. S. , Liang, H. K. , Bao, N. N. , Chen, Tupei , Wong, J. I. , Xue, J. M. , Ding, Jun . Strong green emission in ZnO films after H2 surface treatment. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2555.