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Tunneling field-effect transistor with Ge/In0.53Ga0.47As heterostructure as tunneling junction

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Tunneling field-effect transistor with Ge/In0.53Ga0.47As heterostructure as tunneling junction
นักวิจัย : Guo, Pengfei , Yang, Yue , Cheng, Yuanbing , Han, Genquan , Pan, Jisheng , Ivana , Zhang, Zheng , Hu, Hailong. , Shen, Zexiang , Chia, Ching Kean , Yeo, Yee-Chia
คำค้น : -
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2556
อ้างอิง : Guo, P., Yang, Y.,Cheng, Y., Han, G., Pan, J., Ivana, et al. (2013). Tunneling field-effect transistor with Ge/In0.53Ga0.47As heterostructure as tunneling junction. Journal of applied physics, 113(9). , 0021-8979 , http://hdl.handle.net/10220/11036 , http://dx.doi.org/10.1063/1.4794010
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Journal of applied physics
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

High quality epitaxial germanium (Ge) was successfully grown on In0.53Ga0.47As substrate using a metal-organic chemical vapor deposition tool. The valence band offset ΔEV between the Ge layer and In0.53Ga0.47As determined by high-resolution x-ray photoelectron spectroscopy was found to be 0.5 ± 0.1 eV, suggesting the Ge/In0.53Ga0.47As heterojunction has a staggered band alignment at the interface. This makes the Ge/In0.53Ga0.47As heterojunction a promising tunneling junction for application in tunneling field-effect transistor (TFET). Lateral TFET with in situ doped p+ Ge-source In0.53Ga0.47As-channel using a gate-last process was demonstrated for the first time. The temperature dependence of the TFET transfer characteristics was investigated. The TFET with gate length (LG) of 8 μm exhibits an on-state tunneling current (ION) of 380 nA/μm at VGS = VDS = 2 V. The subthreshold swing (S) at the steepest part of the transfer characteristics of this device is ∼177 mV/decade. It was found that the off-state leakage current (IOFF) was determined by the Shockley-Read-Hall generation-recombination current in the Ge-source region. The temperature dependence of ION was mainly due to the change of the band gap with temperature. Furthermore, S was found to be limited by the trap-assisted tunneling at the Ge/In0.53Ga0.47As tunneling junction. The low ION and poor S can be enhanced by improving the source/channel profile and optimizing Ge epitaxial growth process.

บรรณานุกรม :
Guo, Pengfei , Yang, Yue , Cheng, Yuanbing , Han, Genquan , Pan, Jisheng , Ivana , Zhang, Zheng , Hu, Hailong. , Shen, Zexiang , Chia, Ching Kean , Yeo, Yee-Chia . (2556). Tunneling field-effect transistor with Ge/In0.53Ga0.47As heterostructure as tunneling junction.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Guo, Pengfei , Yang, Yue , Cheng, Yuanbing , Han, Genquan , Pan, Jisheng , Ivana , Zhang, Zheng , Hu, Hailong. , Shen, Zexiang , Chia, Ching Kean , Yeo, Yee-Chia . 2556. "Tunneling field-effect transistor with Ge/In0.53Ga0.47As heterostructure as tunneling junction".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Guo, Pengfei , Yang, Yue , Cheng, Yuanbing , Han, Genquan , Pan, Jisheng , Ivana , Zhang, Zheng , Hu, Hailong. , Shen, Zexiang , Chia, Ching Kean , Yeo, Yee-Chia . "Tunneling field-effect transistor with Ge/In0.53Ga0.47As heterostructure as tunneling junction."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2556. Print.
Guo, Pengfei , Yang, Yue , Cheng, Yuanbing , Han, Genquan , Pan, Jisheng , Ivana , Zhang, Zheng , Hu, Hailong. , Shen, Zexiang , Chia, Ching Kean , Yeo, Yee-Chia . Tunneling field-effect transistor with Ge/In0.53Ga0.47As heterostructure as tunneling junction. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2556.