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Time dependent dielectric breakdown in copper low-k interconnects : mechanisms and reliability models

หน่วยงาน Nanyang Technological University, Singapore

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ชื่อเรื่อง : Time dependent dielectric breakdown in copper low-k interconnects : mechanisms and reliability models
นักวิจัย : Wong, Terence Kin Shun
คำค้น : DRNTU::Engineering::Electrical and electronic engineering.
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2555
อ้างอิง : Wong, T. K. S. (2012). Time Dependent Dielectric Breakdown in Copper Low-k Interconnects: Mechanisms and Reliability Models. Materials, 5(9), 1602-1625. , 1996-1944 , http://hdl.handle.net/10220/10908 , http://dx.doi.org/10.3390/ma5091602
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Materials
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

The time dependent dielectric breakdown phenomenon in copper low-k damascene interconnects for ultra large-scale integration is reviewed. The loss of insulation between neighboring interconnects represents an emerging back end-of-the-line reliability issue that is not fully understood. After describing the main dielectric leakage mechanisms in low-k materials (Poole-Frenkel and Schottky emission), the major dielectric reliability models that had appeared in the literature are discussed, namely: the Lloyd model, 1/E model, thermochemical E model, E1/2 models, E2 model and the Haase model. These models can be broadly categorized into those that consider only intrinsic breakdown (Lloyd, 1/E, E and Haase) and those that take into account copper migration in low-k materials (E1/2, E2). For each model, the physical assumptions and the proposed breakdown mechanism will be discussed, together with the quantitative relationship predicting the time to breakdown and supporting experimental data. Experimental attempts on validation of dielectric reliability models using data obtained from low field stressing are briefly discussed. The phenomenon of soft breakdown, which often precedes hard breakdown in porous ultra low-k materials, is highlighted for future research.

บรรณานุกรม :
Wong, Terence Kin Shun . (2555). Time dependent dielectric breakdown in copper low-k interconnects : mechanisms and reliability models.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Wong, Terence Kin Shun . 2555. "Time dependent dielectric breakdown in copper low-k interconnects : mechanisms and reliability models".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Wong, Terence Kin Shun . "Time dependent dielectric breakdown in copper low-k interconnects : mechanisms and reliability models."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2555. Print.
Wong, Terence Kin Shun . Time dependent dielectric breakdown in copper low-k interconnects : mechanisms and reliability models. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2555.