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Temperature-dependent relaxation current on single and dual layer Pt metal nanocrystal-based Al2O3/SiO2 gate stack

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Temperature-dependent relaxation current on single and dual layer Pt metal nanocrystal-based Al2O3/SiO2 gate stack
นักวิจัย : Chen, Y. N. , Goh, K. E. J. , Wu, X. , Lwin, Z. Z. , Singh, P. K. , Mahapatra, S. , Pey, Kin Leong
คำค้น : DRNTU::Engineering::Electrical and electronic engineering.
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2555
อ้างอิง : Chen, Y. N., Goh, K. E. J., Wu, X., Lwin, Z. Z., Singh, P. K., Mahapatra, S., et al. (2012). Temperature-dependent relaxation current on single and dual layer Pt metal nanocrystal-based Al2O3/SiO2 gate stack. Journal of Applied Physics, 112(10), 104503-. , 0021-8979 , http://hdl.handle.net/10220/10897 , http://dx.doi.org/10.1063/1.4764873
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Journal of applies physics
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

We present a systematic investigation of the temperature dependent relaxation current behavior for single layer and dual layer Pt metal nanocrystal (MNC)-based Al2O3/SiO2 flash memory gate stacks. Stacks containing single layer Pt MNC exhibit a dual-slope behavior in the log-log plots of the relaxation transient, whereas those with dual layer Pt MNC exhibit a single-slope behavior. We propose a physical model embodying two competing relaxation mechanisms to explain the Pt MNC induced relaxation current—thermionic emission and the quantum tunneling. Based on this model, the dual-slope behavior of single layer MNC-based gate stack can be ascribed to the dominance of thermionic emission at the initial part and quantum tunneling at the tail part. In contrast, the single slope behavior of the dual layer metal nanocrystal-based stack arises from the dominance of the quantum tunneling throughout the relaxation. In addition, we verify that stacks containing dual layer MNC show better retention property than their single layer counterparts. Our results demonstrate that relaxation current measurements offer a simple way to assess the charge retention capability for MNC-based gate stacks.

บรรณานุกรม :
Chen, Y. N. , Goh, K. E. J. , Wu, X. , Lwin, Z. Z. , Singh, P. K. , Mahapatra, S. , Pey, Kin Leong . (2555). Temperature-dependent relaxation current on single and dual layer Pt metal nanocrystal-based Al2O3/SiO2 gate stack.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Chen, Y. N. , Goh, K. E. J. , Wu, X. , Lwin, Z. Z. , Singh, P. K. , Mahapatra, S. , Pey, Kin Leong . 2555. "Temperature-dependent relaxation current on single and dual layer Pt metal nanocrystal-based Al2O3/SiO2 gate stack".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Chen, Y. N. , Goh, K. E. J. , Wu, X. , Lwin, Z. Z. , Singh, P. K. , Mahapatra, S. , Pey, Kin Leong . "Temperature-dependent relaxation current on single and dual layer Pt metal nanocrystal-based Al2O3/SiO2 gate stack."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2555. Print.
Chen, Y. N. , Goh, K. E. J. , Wu, X. , Lwin, Z. Z. , Singh, P. K. , Mahapatra, S. , Pey, Kin Leong . Temperature-dependent relaxation current on single and dual layer Pt metal nanocrystal-based Al2O3/SiO2 gate stack. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2555.