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Effects of rapid thermal annealing on structural, magnetic and optical properties of Ni-doped ZnO thin films

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Effects of rapid thermal annealing on structural, magnetic and optical properties of Ni-doped ZnO thin films
นักวิจัย : Zhao, Xing , Liu, Erjia , Ramanujan, Raju Vijayaraghavan , Chen, Jingsheng
คำค้น : DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2554
อ้างอิง : Zhao, X., Liu, E., Ramanujan, R. V., & Chen, J. (2012). Effects of rapid thermal annealing on structural, magnetic and optical properties of Ni-doped ZnO thin films. Current Applied Physics, 12(3), 834-840. , 1567-1739 , http://hdl.handle.net/10220/10831 , http://dx.doi.org/10.1016/j.cap.2011.11.016
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Current applied physics
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

XPS depth profiles were used to investigate the effects of rapid thermal annealing under varying conditions on the structural, magnetic and optical properties of Ni-doped ZnO thin films. Oxidization of metallic Ni from its metallic state to two-valence oxidation state occurred in the film annealed in air at 600 °C, while reduction of Ni2+ from its two-valence oxidation state to metallic state occurred in the film annealed in Ar at 600 and 800 °C. In addition, there appeared to be significant diffusion of Ni from the bottom to the top surface of the film during annealing in Ar at 800 °C. Both as-deposited and annealed thin films displayed obvious room temperature ferromagnetism (RTFM) which was from metallic Ni, Ni2+ or both with two distinct mechanisms. Furthermore, a significant improvement in saturation magnetization (Ms) in the films was observed after annealing in air (Ms = 0.036 μB/Ni) or Ar (Ms = 0.033 μB/Ni) at 600 °C compared to that in as-deposited film (Ms = 0.017 μB/Ni). An even higher Ms value was observed in the film annealed in Ar at 800 °C (Ms = 0.055 μB/Ni) compared to that at 600 °C mainly due to the diffusion of Ni. The ultraviolet emission of the Ni-doped ZnO thin film was restored during annealing in Ar at 800 °C, which was also attributed to the diffusion of Ni.

บรรณานุกรม :
Zhao, Xing , Liu, Erjia , Ramanujan, Raju Vijayaraghavan , Chen, Jingsheng . (2554). Effects of rapid thermal annealing on structural, magnetic and optical properties of Ni-doped ZnO thin films.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Zhao, Xing , Liu, Erjia , Ramanujan, Raju Vijayaraghavan , Chen, Jingsheng . 2554. "Effects of rapid thermal annealing on structural, magnetic and optical properties of Ni-doped ZnO thin films".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Zhao, Xing , Liu, Erjia , Ramanujan, Raju Vijayaraghavan , Chen, Jingsheng . "Effects of rapid thermal annealing on structural, magnetic and optical properties of Ni-doped ZnO thin films."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2554. Print.
Zhao, Xing , Liu, Erjia , Ramanujan, Raju Vijayaraghavan , Chen, Jingsheng . Effects of rapid thermal annealing on structural, magnetic and optical properties of Ni-doped ZnO thin films. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2554.