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Erbium silicided schottky source/drain silicon nanowire N-metal–oxide–semiconductor field-effect transistors

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Erbium silicided schottky source/drain silicon nanowire N-metal–oxide–semiconductor field-effect transistors
นักวิจัย : Tan, Eu Jin , Pey, Kin Leong , Singh, Navab , Chi, Dong Zhi , Lo, Guo-Qiang , Lee, Pooi See , Hoe, Keat Mun , Chin, Yoke King , Cui, Guangda
คำค้น : DRNTU::Engineering::Electrical and electronic engineering
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2551
อ้างอิง : Tan, E. J., Pey, K. L., Singh, N., Chi, D. Z., Lo, G. Q., Lee, P. S., et al. (2008). Erbium silicided Schottky Source/Drain Silicon Nanowire N-Metal–Oxide–Semiconductor Field-Effect Transistors. Japanese Journal of Applied Physics, 47(4), 3277-3281. , 1347-4065 , http://hdl.handle.net/10220/10505 , http://dx.doi.org/10.1143/JJAP.47.3277
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Japanese journal of applied physics
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

Schottky source/drain (S/D) N-metal–oxide–semiconductor-field-effect transistor (MOSFET) have been fabricated using a simplified top down process with silicon nanowires (SiNW) as the channel body and ErSi2-x as the metal silicide S/D. Despite the use of a thick buried oxide (BOX) layer as the gate dielectric, the devices show good electrical characteristics with high Ion/Ioff ratio of ∼105, high drive current of ∼900 µA/µm, which are significantly higher than those previously reported Schottky S/D MOSFETs without barrier-modified junctions. The effect of physical characteristics such as metal-silicided junction depth, number of SiNW channels, and metal–semiconductor junction size were investigated and found to have a direct effect on the electrical performance of the devices. Current transport as a function of Schottky barrier height (Φbeff) modulation was also studied.

บรรณานุกรม :
Tan, Eu Jin , Pey, Kin Leong , Singh, Navab , Chi, Dong Zhi , Lo, Guo-Qiang , Lee, Pooi See , Hoe, Keat Mun , Chin, Yoke King , Cui, Guangda . (2551). Erbium silicided schottky source/drain silicon nanowire N-metal–oxide–semiconductor field-effect transistors.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Tan, Eu Jin , Pey, Kin Leong , Singh, Navab , Chi, Dong Zhi , Lo, Guo-Qiang , Lee, Pooi See , Hoe, Keat Mun , Chin, Yoke King , Cui, Guangda . 2551. "Erbium silicided schottky source/drain silicon nanowire N-metal–oxide–semiconductor field-effect transistors".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Tan, Eu Jin , Pey, Kin Leong , Singh, Navab , Chi, Dong Zhi , Lo, Guo-Qiang , Lee, Pooi See , Hoe, Keat Mun , Chin, Yoke King , Cui, Guangda . "Erbium silicided schottky source/drain silicon nanowire N-metal–oxide–semiconductor field-effect transistors."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2551. Print.
Tan, Eu Jin , Pey, Kin Leong , Singh, Navab , Chi, Dong Zhi , Lo, Guo-Qiang , Lee, Pooi See , Hoe, Keat Mun , Chin, Yoke King , Cui, Guangda . Erbium silicided schottky source/drain silicon nanowire N-metal–oxide–semiconductor field-effect transistors. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2551.