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Fabrication of unipolar graphene field-effect transistors by modifying source and drain electrode interfaces with zinc porphyrin

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Fabrication of unipolar graphene field-effect transistors by modifying source and drain electrode interfaces with zinc porphyrin
นักวิจัย : Khaderbad, Mrunal A. , Tjoa, Verawati , Rao, Manohar , Phandripande, Rohit , Madhu, Sheri , Wei, Jun , Ravikanth, Mangalampalli , Mathews, Nripan , Mhaisalkar, Subodh Gautam , Rao, V. Ramgopal
คำค้น : -
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2555
อ้างอิง : Khaderbad, M. A., Tjoa, V., Rao, M., Phandripande, R., Madhu, S., Wei, J., et al. (2012). Fabrication of Unipolar Graphene Field-Effect Transistors by Modifying Source and Drain Electrode Interfaces with Zinc Porphyrin. ACS Applied Materials & Interfaces, 4(3), 1434-1439. , 1944-8244 , http://hdl.handle.net/10220/10279 , http://dx.doi.org/10.1021/am201691s
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : ACS applied materials & interfaces
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

We report a unipolar operation in reduced graphene oxide (RGO) field-effect transistors (FETs) via modification of the source/drain (S/D) electrode interfaces with self-assembled monolayers (SAMs) of 5-(4-hydroxyphenyl)-10,15,20-tri-(p-tolyl) zinc(II) porphyrin (Zn(II)TTPOH) molecules. The dipolar Zn(II)TTPOH molecules at the RGO/platinum (Pt) S/D interface results in an increase of the electron injection barrier and a reduction of the hole-injection barrier. Using dipole measurements from Kelvin probe force microscopy and highest occupied molecular orbital–lowest unoccupied molecular orbital (HOMO–LUMO) calculations from cyclic voltammetry, the electron and hole injection barriers were calculated to be 2.2 and 0.11 eV, respectively, indicating a higher barrier for electrons, compared to that of holes. A reduced gate modulation in the electron accumulation regime in RGO devices with SAM shows that unipolar RGO FETs can be attained using a low-cost, solution-processable fabrication technique.

บรรณานุกรม :
Khaderbad, Mrunal A. , Tjoa, Verawati , Rao, Manohar , Phandripande, Rohit , Madhu, Sheri , Wei, Jun , Ravikanth, Mangalampalli , Mathews, Nripan , Mhaisalkar, Subodh Gautam , Rao, V. Ramgopal . (2555). Fabrication of unipolar graphene field-effect transistors by modifying source and drain electrode interfaces with zinc porphyrin.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Khaderbad, Mrunal A. , Tjoa, Verawati , Rao, Manohar , Phandripande, Rohit , Madhu, Sheri , Wei, Jun , Ravikanth, Mangalampalli , Mathews, Nripan , Mhaisalkar, Subodh Gautam , Rao, V. Ramgopal . 2555. "Fabrication of unipolar graphene field-effect transistors by modifying source and drain electrode interfaces with zinc porphyrin".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Khaderbad, Mrunal A. , Tjoa, Verawati , Rao, Manohar , Phandripande, Rohit , Madhu, Sheri , Wei, Jun , Ravikanth, Mangalampalli , Mathews, Nripan , Mhaisalkar, Subodh Gautam , Rao, V. Ramgopal . "Fabrication of unipolar graphene field-effect transistors by modifying source and drain electrode interfaces with zinc porphyrin."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2555. Print.
Khaderbad, Mrunal A. , Tjoa, Verawati , Rao, Manohar , Phandripande, Rohit , Madhu, Sheri , Wei, Jun , Ravikanth, Mangalampalli , Mathews, Nripan , Mhaisalkar, Subodh Gautam , Rao, V. Ramgopal . Fabrication of unipolar graphene field-effect transistors by modifying source and drain electrode interfaces with zinc porphyrin. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2555.