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Triggering voltage for post-breakdown random telegraph noise in HfLaO dielectric metal gate metal-oxide-semiconductor field effect transistors and its reliability implications

หน่วยงาน Nanyang Technological University, Singapore

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ชื่อเรื่อง : Triggering voltage for post-breakdown random telegraph noise in HfLaO dielectric metal gate metal-oxide-semiconductor field effect transistors and its reliability implications
นักวิจัย : Liu, W. H. , Pey, Kin Leong , Raghavan, Nagarajan , Wu, X. , Bosman, Michel
คำค้น : DRNTU::Engineering::Electrical and electronic engineering::Antennas, wave guides, microwaves, radar, radio
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2555
อ้างอิง : Liu, W. H., Pey, K. L., Raghavan, N., Wu, X., & Bosman, M. (2012). Triggering voltage for post-breakdown random telegraph noise in HfLaO dielectric metal gate metal-oxide-semiconductor field effect transistors and its reliability implications. Journal of applied physics, 111(2). , 0021-8979 , http://hdl.handle.net/10220/10027 , http://dx.doi.org/10.1063/1.3676255
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Journal of applied physics
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

We report a triggering voltage Vtrig for observing gate leakage current (Ig) random telegraph noise (RTN) in the post-breakdown regime of HfLaO dielectric metal gate stacks. Vtrig, the onset voltage to observe RTN in degraded dielectrics, is highly dependent on breakdown hardness, which is controlled by the leakage current compliance (Igl). This dependence is qualitatively analyzed using a percolation dilation model, where generation of additional traps either at different energy levels or spatial locations gives lower Vtrig at higher Igl. The magnitude of Vtrig can be used as a direct indication of the impact of RTN on the performance of the transistor at device level, when Vtrig is evaluated by comparing with the device operating voltage.

บรรณานุกรม :
Liu, W. H. , Pey, Kin Leong , Raghavan, Nagarajan , Wu, X. , Bosman, Michel . (2555). Triggering voltage for post-breakdown random telegraph noise in HfLaO dielectric metal gate metal-oxide-semiconductor field effect transistors and its reliability implications.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Liu, W. H. , Pey, Kin Leong , Raghavan, Nagarajan , Wu, X. , Bosman, Michel . 2555. "Triggering voltage for post-breakdown random telegraph noise in HfLaO dielectric metal gate metal-oxide-semiconductor field effect transistors and its reliability implications".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Liu, W. H. , Pey, Kin Leong , Raghavan, Nagarajan , Wu, X. , Bosman, Michel . "Triggering voltage for post-breakdown random telegraph noise in HfLaO dielectric metal gate metal-oxide-semiconductor field effect transistors and its reliability implications."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2555. Print.
Liu, W. H. , Pey, Kin Leong , Raghavan, Nagarajan , Wu, X. , Bosman, Michel . Triggering voltage for post-breakdown random telegraph noise in HfLaO dielectric metal gate metal-oxide-semiconductor field effect transistors and its reliability implications. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2555.