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Electronic band structure and effective mass parameters of Ge1−xSnx alloys

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Electronic band structure and effective mass parameters of Ge1−xSnx alloys
นักวิจัย : Low, Kain Lu , Yang, Yue , Han, Genquan , Fan, Weijun , Yeo, Yee-Chia
คำค้น : -
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2555
อ้างอิง : Low, K. L., Yang, Y., Han, G., Fan, W., & Yeo, Y.-C. (2012). Electronic band structure and effective mass parameters of Ge1−xSnx alloys. Journal of Applied Physics, 112(10), 103715-. , 0021-8979 , http://hdl.handle.net/10220/10110 , http://dx.doi.org/10.1063/1.4767381
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Journal of applied physics
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

This work investigates the electronic band structures of bulk Ge1-xSnx alloys using the empirical pseudopotential method (EPM) for Sn composition x varying from 0 to 0.2. The adjustable form factors of EPM were tuned in order to reproduce the band features that agree well with the reported experimental data. Based on the adjusted pseudopotential form factors, the band structures of Ge1-xSnx alloys were calculated along high symmetry lines in the Brillouin zone. The effective masses at the band edges were extracted by using a parabolic line fit. The bowing parameters of hole and electron effective masses were then derived by fitting the effective mass at different Sn compositions by a quadratic polynomial. The hole and electron effective mass were examined for bulk Ge1-xSnx alloys along specific directions or orientations on various crystal planes. In addition, employing the effective-mass Hamiltonian for diamond semiconductor, band edge dispersion at the Γ-point calculated by 8-band k.p. method was fitted to that obtained from EPM approach. The Luttinger-like parameters were also derived for Ge1-xSnx alloys. They were obtained by adjusting the effective-mass parameters of k.p method to fit the k.p band structure to that of the EPM. These effective masses and derived Luttinger parameters are useful for the design of optical and electronic devices based on Ge1-xSnx alloys.

บรรณานุกรม :
Low, Kain Lu , Yang, Yue , Han, Genquan , Fan, Weijun , Yeo, Yee-Chia . (2555). Electronic band structure and effective mass parameters of Ge1−xSnx alloys.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Low, Kain Lu , Yang, Yue , Han, Genquan , Fan, Weijun , Yeo, Yee-Chia . 2555. "Electronic band structure and effective mass parameters of Ge1−xSnx alloys".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Low, Kain Lu , Yang, Yue , Han, Genquan , Fan, Weijun , Yeo, Yee-Chia . "Electronic band structure and effective mass parameters of Ge1−xSnx alloys."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2555. Print.
Low, Kain Lu , Yang, Yue , Han, Genquan , Fan, Weijun , Yeo, Yee-Chia . Electronic band structure and effective mass parameters of Ge1−xSnx alloys. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2555.